international-rectifier . IRF1405ZSPBF
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 58K5752 | 1 | 1 | ||
 Radwell | IRF1405ZSPBF | 400 | 400 | ||
| 1Source | IRF1405ZSPBF | 1 | 1 | ||
| Digi-Key | 12595850 | 1 | 1 | 250 @ $1.20 | |
| Hotenda | H1831107 | 1 | 1 |
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MOSFET 55V 1 N-CH HEXFET 4.9mOhms 120nC (10 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 150 A Rds On - Drain-Source Resistance: 4.9 mOhms Configuration: Single Qg - Gate Charge: 120 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 230 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRF1405ZSPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 55V 1 N-CH HEXFET 4.9mOhms 120nC (100 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 150 A Rds On - Drain-Source Resistance: 4.9 mOhms Configuration: Single Qg - Gate Charge: 120 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 230 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRF1405ZSPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 55V 1 N-CH HEXFET 4.9mOhms 120nC (5 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 150 A Rds On - Drain-Source Resistance: 4.9 mOhms Configuration: Single Qg - Gate Charge: 120 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 230 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRF1405ZSPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 55V 1 N-CH HEXFET 4.9mOhms 120nC (50 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 150 A Rds On - Drain-Source Resistance: 4.9 mOhms Configuration: Single Qg - Gate Charge: 120 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 230 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRF1405ZSPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 55V 1 N-CH HEXFET 4.9mOhms 120nC (1 piece)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 150 A Rds On - Drain-Source Resistance: 4.9 mOhms Configuration: Single Qg - Gate Charge: 120 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 230 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRF1405ZSPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |