Vishay Mosfet, P Channel, -200V, -1.9A, To-252-3 - IRFR9210TRPBF

VISHAY SILICONIX IRFR9210TRPBF MOSFET, P CH, -200V, -1.9A, TO-252-3

Single P-Channel 200 V 3 Ohms Surface Mount Power Mosfet - TO-252 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****

EU RoHS: Compliant with Exemption ECCN (US): EAR99 Part Status: Active HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Process Technology: HEXFET Channel Mode: Enhancement Channel Type: P Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 200 Maximum Gate Source Voltage (V): ±20 Maximum Gate Threshold Voltage (V): 4 Maximum Continuous Drain Current (A): 1.9 Maximum Gate Source Leakage Current (nA): 100 Maximum IDSS (uA): 100 Maximum Drain Source Resistance (mOhm): 3000@10V Typical Gate Charge @ Vgs (nC): 8.9(Max)@10V Typical Gate Charge @ 10V (nC): 8.9(Max) Typical Input Capacitance @ Vds (pF): 170@25V Maximum Power Dissipation (mW): 2500 Typical Fall Time (ns): 13 Typical Rise Time (ns): 12 Typical Turn-Off Delay Time (ns): 11 Typical Turn-On Delay Time (ns): 8 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Packaging: Tape and Reel Supplier Package: DPAK Pin Count: 3 Standard Package Name: TO-252 Mounting: Surface Mount Package Height: 2.39(Max) Package Length: 6.73(Max) Package Width: 6.22(Max) PCB changed: 2 Tab: Tab

MOSFET, P CHANNEL, -200V, -1.9A, TO-252-3; Transistor Polarity:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:1.9A; On Resistance Rds(on):3ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes