IXYS SEMICONDUCTOR . IXA45IF1200HB
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 83R9963 | 1 | 1 | ||
 jotrin.com | JT25-IXA45IF1200HB | 1 | 305 | 1 | |
| IXA45IF1200HB | 1 | 1 | |||
| Digi-Key | 4321657 | 1 | 184 | 1 | 1 @ $12.22, 10 @ $11.04, 100 @ $9.14, 500 @ $7.96, 1000 @ $6.93 |
| RS Delivers | 808-0262 | 1 | 1 | ||
| 1Source | IXA45IF1200HB | 1 | 1 | ||
 Radwell | IXA45IF1200HB | 1 | 1 | 1 @ $16.00 | |
| Hotenda | H1849682 | 1 | 1 | ||
| Future Electronics | 5496856 | 30 | 30 | 30 @ $6.14, 60 @ $5.79, 120 @ $5.61 |
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IGBT Transistors N-Channel: Power MOSFET w/Fast Diode
Brand: IXYS
Catalog
| Feature | Manufacturer: IXYS Product Category: IGBT Transistors RoHS: Configuration: Single Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 1.8 V Maximum Gate Emitter Voltage: 20 V Continuous Collector Current at 25 C: 78 A Gate-Emitter Leakage Current: 500 nA Power Dissipation: 325 W Maximum Operating Temperature: + 150 C Package / Case: TO-247-3 Packaging: Tube |
|---|---|
| Category | Industrial & Scientific |
| MPN | IXA45IF1200HB |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | IXYS |