Onsemi Dual N Channel Mosfet, 60V, Sot-563, Full Reel - NTZD5110NT1G
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Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 50M4409 | 4000 | 4000 | 3000 @ $0.10, 6000 @ $0.08, 12000 @ $0.07, 18000 @ $0.07, 30000 @ $0.06 | |
| Newark | 14AC4783 | 1 | 1 | ||
 jotrin.com | JT25-NTZD5110NT1G | 1 | 3900 | 1 | |
| NTZD5110NT1G | 1 | 1 | |||
 TME | NTZD5110NT1G | 5 | 5 | 5 @ $0.24, 25 @ $0.13, 100 @ $0.12, 500 @ $0.10, 4000 @ $0.10 | |
| RS Online | 1631146 | 1 | 1 | ||
| 1Source | NTZD5110NT1G | 1 | 1 | ||
| Allied Electronics | 70341434 | 1 | 1 | ||
| Digi-Key | 3462795 | 1 | 1 | 1 @ $0.47, 10 @ $0.35, 100 @ $0.22, 500 @ $0.15, 1000 @ $0.12, 2000 @ $0.10, 4000 @ $0.10, 8000 @ $0.10 | |
 Radwell | NTZD5110NT1G | 1 | 1 | 1 @ $0.30 | |
| 163-1146 | 4000 | 4000 | 4000 @ $0.05 | ||
| Future Electronics | 9310855 | 12000 | 12000 | 12000 @ $0.06, 8000 @ $0.05 |
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MOSFET SMALL SIGNAL MOSFET 60V 310mA DUAL N-CH (10 pieces)
Brand: ON Semiconductor
Catalog
| Feature | Manufacturer: ON Semiconductor Product Category: MOSFETs- Power and Small Signal RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 60 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 294 mA Rds On - Drain-Source Resistance: 1600 mOhms Configuration: Dual Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 250 mW Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | NTZD5110NT1G |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | ON Semiconductor |
MOSFET SMALL SIGNAL MOSFET 60V 310mA DUAL N-CH (100 pieces)
Brand: ON Semiconductor
Catalog
| Feature | Manufacturer: ON Semiconductor Product Category: MOSFETs- Power and Small Signal RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 60 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 294 mA Rds On - Drain-Source Resistance: 1600 mOhms Configuration: Dual Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 250 mW Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | NTZD5110NT1G |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | ON Semiconductor |
MOSFET SMALL SIGNAL MOSFET 60V 310mA DUAL N-CH (5 pieces)
Brand: ON Semiconductor
Catalog
| Feature | Manufacturer: ON Semiconductor Product Category: MOSFETs- Power and Small Signal RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 60 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 294 mA Rds On - Drain-Source Resistance: 1600 mOhms Configuration: Dual Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 250 mW Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | NTZD5110NT1G |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | ON Semiconductor |
MOSFET SMALL SIGNAL MOSFET 60V 310mA DUAL N-CH (50 pieces)
Brand: ON Semiconductor
Catalog
| Feature | Manufacturer: ON Semiconductor Product Category: MOSFETs- Power and Small Signal RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 60 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 294 mA Rds On - Drain-Source Resistance: 1600 mOhms Configuration: Dual Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 250 mW Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | NTZD5110NT1G |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | ON Semiconductor |
MOSFET SMALL SIGNAL MOSFET 60V 310mA DUAL N-CH (500 pieces)
Brand: ON Semiconductor
Catalog
| Feature | Manufacturer: ON Semiconductor Product Category: MOSFETs- Power and Small Signal RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 60 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 294 mA Rds On - Drain-Source Resistance: 1600 mOhms Configuration: Dual Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 250 mW Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | NTZD5110NT1G |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | ON Semiconductor |
MOSFET SMALL SIGNAL MOSFET 60V 310mA DUAL N-CH (1 piece)
Brand: ON Semiconductor
Listing
| Product group | BISS |
|---|---|
| Product type | ELECTRONIC_COMPONENT |
| Part number | NTZD5110NT1G |
| Label | ON Semiconductor |
| Manufacturer | ON Semiconductor |
Catalog
| Feature | Manufacturer: ON Semiconductor Product Category: MOSFETs- Power and Small Signal RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 60 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 294 mA Rds On - Drain-Source Resistance: 1600 mOhms Configuration: Dual Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 250 mW Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | NTZD5110NT1G |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | ON Semiconductor |
ON SEMICONDUCTOR NTZD5110NT1G Dual N-Channel 60 V 1.6 Ohm 250 mW Small Signal MOSFET - SOT-563 - 4000 item(s)
Listing
| Binding | Tools & Home Improvement |
|---|---|
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Model | NTZD5110NT1G |
| Part number | NTZD5110NT1G |
| Label | ON SEMICONDUCTOR |
| Manufacturer | ON SEMICONDUCTOR |
Catalog
| Category | Industrial & Scientific |
|---|---|
| MPN | NTZD5110NT1G |
| EAN | 4550034511387 |
| Product group | BISS Basic |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | ON SEMICONDUCTOR |