Attribute08: -40...105?C
Products with this attribute (103 total)
Analog Devices ADUM2251ARIZ-RL | IC: interface; digital isolator; 1Mbps; iCoupler?; 3?5.5VDC; I2C
CHANGZHOU HUAWEI ELECTRONIC GF1C101MC110A00CE0 | Capacitor: electrolytic; THT; 100uF; 16VDC; ?5x11mm; Pitch: 2mm
CHANGZHOU HUAWEI ELECTRONIC GF1C103MM400A00CE0 | Capacitor: electrolytic; THT; 10mF; 16VDC; ?18x40mm; Pitch: 7.5mm
CHANGZHOU HUAWEI ELECTRONIC GF1H221MG125A00CE0 | Capacitor: electrolytic; THT; 220uF; 50VDC; ?10x12.5mm; Pitch: 5mm
CHANGZHOU HUAWEI ELECTRONIC LB1H101MF115A00CE0 | Capacitor: electrolytic; THT; 100uF; 50VDC; ?8x11.5mm; Pitch: 3.5mm
CHANGZHOU HUAWEI ELECTRONIC RL1H101MF115A00CE0 | Capacitor: electrolytic; THT; 100uF; 50VDC; ?8x11.5mm; Pitch: 3.5mm
CINCON CQB100W14-72S12N | Converter: DC/DC; 100W; Uin: 12?160V; Uout: 12VDC; Iout: 8.3A; 66g
CINCON CQB100W14-72S15N-B | Converter: DC/DC; 100W; Uin: 12?160V; Uout: 15VDC; Iout: 6.7A; 66g
CINCON CQB100W14-72S24 | Converter: DC/DC; 100W; Uin: 12?160V; Uout: 24VDC; Iout: 4.2A; 66g
CINCON CQB100W14-72S24-C | Converter: DC/DC; 100W; Uin: 12?160V; Uout: 24VDC; Iout: 4.2A; 66g
CINCON CQB100W14-72S54N-B | Converter: DC/DC; 100W; Uin: 12?160V; Uout: 54VDC; Iout: 1.85A; 66g
CINCON CQB150W-24S05 | Converter: DC/DC; 150W; Uin: 9?36V; Uout: 5VDC; Iout: 30A; 300kHz
CINCON CQB150W-24S12 | Converter: DC/DC; 150W; Uin: 9?36V; Uout: 12VDC; Iout: 12.5A; 68g
CINCON CQB150W-24S28-C | Converter: DC/DC; 150W; Uin: 9?36V; Uout: 28VDC; Iout: 5.4A; 68g
CINCON CQB150W-48S48 | Converter: DC/DC; 150W; Uin: 18?75V; Uout: 48VDC; Iout: 3.2A; 300kHz
CINCON CQB200-24S28 | Converter: DC/DC; 200W; Uin: 18?36V; Uout: 28VDC; Iout: 7.14A; 250kHz
CINCON CQB50W8-36S12-CMFC | Converter: DC/DC; 50W; Uin: 9.5?75V; Uout: 12VDC; Iout: 4.17A; 200kHz
CINCON CQB50W8-36S15-CMFD | Converter: DC/DC; 50W; Uin: 9.5?75V; Uout: 15VDC; Iout: 3.33A; 200kHz
CINCON CQB50W8-36S28-CMFC | Converter: DC/DC; 50W; Uin: 9.5?75V; Uout: 28VDC; Iout: 1.79A; 200kHz
CINCON CQB50W8-36S48 | Converter: DC/DC; 50W; Uin: 9?75V; Uout: 48VDC; Iout: 1.05A; 66g
CINCON CQB50W8-36S48-CMFD | Converter: DC/DC; 50W; Uin: 9.5?75V; Uout: 48VDC; Iout: 1.05A; 200kHz
CINCON CQB75-300S12 | Converter: DC/DC; 75W; Uin: 180?450V; Uout: 12VDC; Iout: 6.25A
CINCON CQB75W14-72S12-C-B | Converter: DC/DC; 75W; Uin: 12?160V; Uout: 12VDC; Iout: 6.3A; 66g
CINCON CQB75W14-72S15N | Converter: DC/DC; 75W; Uin: 12?160V; Uout: 15VDC; Iout: 5A; 66g
CINCON CQB75W14-72S24N | Converter: DC/DC; 75W; Uin: 12?160V; Uout: 24VDC; Iout: 3.12A; 66g
CINCON CQB75W14-72S54 | Converter: DC/DC; 75W; Uin: 12?160V; Uout: 54VDC; Iout: 1.4A; 66g
CINCON CQB75W14-72S54-C-B | Converter: DC/DC; 75W; Uin: 12?160V; Uout: 54VDC; Iout: 1.4A; 66g
CINCON CQB75W8-36S12-C | Converter: DC/DC; 75W; Uin: 9?75V; Uout: 12VDC; Iout: 6.25A; 200kHz
CINCON CQB75W8-36S24N-C | Converter: DC/DC; 75W; Uin: 9?75V; Uout: 24VDC; Iout: 3.12A; 200kHz
CQB50W8-36S12-CMFD
HELLERMANNTYTON 211-60149 | Fixing clamp; Cable P-clips; ?Bundle : 24mm; W: 10mm; polyamide
HELLERMANNTYTON 211-60179 | Fixing clamp; Cable P-clips; ?Bundle : 31.5mm; W: 10mm; polyamide
ISSI IS25LP016D-JKLE | IC: FLASH memory; 16Mb; DTR,QPI,SPI; 133MHz; 2.3?3.6V; WSON8; 6x5mm
ISSI IS25LP016D-JLLE-TR | IC: FLASH memory; 16Mb; DTR,QPI,SPI; 133MHz; 2.3?3.6V; WSON8
ISSI IS25LP032D-JBLE-TR | IC: FLASH memory; 32Mb; DTR,QPI,SPI; 133MHz; 2.3?3.6V; SOP8; serial
ISSI IS25LP032D-JKLE | IC: FLASH memory; 32Mb; DTR,QPI,SPI; 133MHz; 2.3?3.6V; WSON8; 6x5mm
ISSI IS25LP064A-JMLE | IC: FLASH memory; 64Mb; QPI,SPI; 133MHz; 2.3?3.6V; SO16; serial
ISSI IS25LP064D-JBLE-TR | IC: FLASH memory; 64Mb; DTR,QPI,SPI; 166MHz; 2.3?3.6V; SO8; serial
ISSI IS25LP080D-JNLE | IC: FLASH memory; 8Mb; DTR,QPI,SPI; 133MHz; 2.3?3.6V; SO8; serial
ISSI IS25LP128-JBLE | IC: FLASH memory; 128Mb; QPI,SPI; 133MHz; 2.3?3.6V; SO8; serial
ISSI IS25LP128F-JBLE | IC: FLASH memory; 128Mb; DTR,QPI,SPI; 166MHz; 2.3?3.6V; SO8; serial
ISSI IS25LP128F-JBLE-TR | IC: FLASH memory; 128Mb; DTR,QPI,SPI; 166MHz; 2.3?3.6V; SO8; serial
ISSI IS25LP128F-JKLE-TR | IC: FLASH memory; 128Mb; DTR,QPI,SPI; 166MHz; 2.3?3.6V; WSON8
ISSI IS25LP128F-JLLE | IC: FLASH memory; 128Mb; DTR,QPI,SPI; 166MHz; 2.3?3.6V; WSON8
ISSI IS25LP512M-RMLE-TR | IC: FLASH memory; 512Mb; DTR,QPI,SPI; 133MHz; 2.3?3.6V; SO16
ISSI IS25WP064A-RHLE | IC: FLASH memory; 64Mb; DTR,QPI,SPI; 133MHz; 1.65?1.95V; TFBGA24
ISSI IS25WP064D-JBLE-TR | IC: FLASH memory; 64Mb; DTR,QPI,SPI; 166MHz; 1.65?1.95V; SO8
ISSI IS25WP080D-JBLE | IC: FLASH memory; 8Mb; DTR,QPI,SPI; 133MHz; 1.65?1.95V; SO8; serial
ISSI IS25WP080D-JKLE | IC: FLASH memory; 8Mb; DTR,QPI,SPI; 133MHz; 1.65?1.95V; WSON8
ISSI IS25WP128-JLLE | IC: FLASH memory; 128Mb; DTR,QPI,SPI; 133MHz; 1.65?1.95V; WSON8
ISSI IS25WP128-JMLE | IC: FLASH memory; 128Mb; DTR,QPI,SPI; 133MHz; 1.65?1.95V; SO16
ISSI IS25WP128-RHLE-TR | IC: FLASH memory; 128Mb; DTR,QPI,SPI; 133MHz; 1.65?1.95V; TFBGA24
ISSI IS25WP128F-JBLE-TR | IC: FLASH memory; 128Mb; DTR,QPI,SPI; 166MHz; 1.65?1.95V; SO8
ISSI IS25WP128F-JKLE | IC: FLASH memory; 128Mb; DTR,QPI,SPI; 166MHz; 1.65?1.95V; WSON8
ISSI IS25WP256E-RHLE | IC: FLASH memory; 256Mb; DTR,QPI,SPI; 166MHz; 1.65?1.95V; TFBGA24
ISSI IS25WP512M-RHLE | IC: FLASH memory; 512Mb; DTR,QPI,SPI; 112MHz; 1.65?1.95V; TFBGA24
ISSI IS29GL064-70TLET | IC: FLASH memory; CFI,parallel; 70ns; TSOP48; parallel
ISSI IS29GL128-70DLEB | IC: FLASH memory; CFI,parallel; 70ns; LFBGA64; parallel
ISSI IS29GL128-70DLET | IC: FLASH memory; CFI,parallel; 70ns; LFBGA64; parallel
ISSI IS29GL256-70DLEB-TR | IC: FLASH memory; CFI,parallel; 70ns; LFBGA64; parallel; reel,tape
ISSI IS29GL256-70FLET | IC: FLASH memory; CFI,parallel; 70ns; LFBGA64; parallel
Jb Capacitors JRG0J331M02500630115000B | Capacitor: electrolytic; THT; 330uF; 6.3VDC; ?6.3x11.5mm; ?20%
Jb Capacitors JRG1A221M02500630115000B | Capacitor: electrolytic; THT; 220uF; 10VDC; ?6.3x11.5mm; ?20%
KEMET ALC80A331BB200 | Capacitor: electrolytic; SNAP-IN; 330uF; 200VDC; ?25x30mm; ?20%
KEMET ALC80A331BD250 | Capacitor: electrolytic; SNAP-IN; 330uF; 250VDC; ?25x40mm; ?20%
KEMET ALC80A682EF100 | Capacitor: electrolytic; SNAP-IN; 6.8mF; 100VDC; ?40x50mm; ?20%
MICROCHIP TECHNOLOGY ATSAMA5D22B-CUR | IC: ARM microprocessor; SRAM: 128kB; TFBGA196; 1.1?1.32VDC; reel
MURATA NFZ32BW151HN11L | Ferrite: bead; Imp.@ 100MHz: 150?; SMD; 270mA; 1210; R: 822m?; ?30%
MURATA NFZ32BW151HZ11L | Ferrite: bead; Imp.@ 100MHz: 150?; SMD; 270mA; 1210; R: 822m?; ?30%
MURATA NFZ32BW210HN10L | Ferrite: bead; Imp.@ 100MHz: 21?; SMD; 670mA; 1210; R: 144m?; ?30%
MURATA NFZ32BW210HZ11L | Ferrite: bead; Imp.@ 100MHz: 21?; SMD; 800mA; 1210; R: 120m?; ?30%
MURATA NFZ32BW3R3HN11L | Ferrite: bead; Imp.@ 100MHz: 3.3?; SMD; 1.49A; 1210; R: 28.8m?; ?30%
MURATA NFZ32BW3R6HZ10L | Ferrite: bead; Imp.@ 100MHz: 3.6?; SMD; 1.6A; 1210; R: 36m?; ?30%
MURATA NFZ32BW621HN10L | Ferrite: bead; Imp.@ 100MHz: 620?; SMD; 110mA; 1210; R: 3.24?; ?30%
MURATA NFZ32BW650HZ11L | Ferrite: bead; Imp.@ 100MHz: 65?; SMD; 450mA; 1210; R: 354m?; ?30%
MURATA NFZ32BW6R8HN11L | Ferrite: bead; Imp.@ 100MHz: 6.8?; SMD; 1.38A; 1210; R: 43.2m?; ?30%
MURATA NFZ32BW8R4HN11L | Ferrite: bead; Imp.@ 100MHz: 8.4?; SMD; 1.36A; 1210; R: 57.6m?; ?30%
MURATA NFZ32BW9R8HZ11L | Ferrite: bead; Imp.@ 100MHz: 9.8?; SMD; 1.11A; 1210; R: 63.6m?; ?30%
MURATA NFZ5BBW141LN10L | Ferrite: bead; Imp.@ 100MHz: 140?; SMD; 600mA; 2020; R: 311m?; ?30%
MURATA NFZ5BBW2R9LZ10L | Ferrite: bead; Imp.@ 100MHz: 2.9?; SMD; 2.05A; 2020; R: 14m?; ?30%
MURATA NFZ5BBW450LN10L | Ferrite: bead; Imp.@ 100MHz: 45?; SMD; 1.02A; 2020; R: 100m?; ?30%
MURATA NFZ5BBW4R5LZ10L | Ferrite: bead; Imp.@ 100MHz: 4.5?; SMD; 1.8A; 2020; R: 18m?; ?30%
NICHICON LGN2E471MELZ40 | Capacitor: electrolytic; SNAP-IN; 470uF; 250VDC; ?22x40mm; ?20%
NICHICON UUJ2C101MRQ6MS | Capacitor: electrolytic; SMD; 100uF; 160VDC; ?20x16.5mm; ?20%
NXP LPC1114JHN33/203E | IC: ARM microcontroller; SRAM: 4kB; HVQFN33; 1.8?3.6VDC; LPC
NXP MK20DX32VFT5 | IC: ARM microcontroller; SRAM: 8kB; QFN48; 1.71?3.6VDC; Flash: 32kB
NXP MKL03Z16VFK4R | IC: ARM microcontroller; SRAM: 2kB; QFN24; 1.71?3.6VDC; Flash: 16kB
NXP MKL05Z16VFM4 | IC: ARM microcontroller; SRAM: 2kB; QFN32; 1.71?3.6VDC; Flash: 16kB
NXP MKL16Z64VLH4R | IC: ARM microcontroller; SRAM: 8kB; LQFP64; 1.71?3.6VDC; KINETIS
NXP MKV30F64VLF10R | IC: ARM microcontroller; SRAM: 16kB; LQFP48; 1.71?3.6VDC; KINETIS
OMRON OCB G3VM63GTR05 | Relay: solid state; SPST-NC; 500mA; max.60VAC; max.60VDC; SMT; SOP4
PANASONIC EEEHB0J331P | Capacitor: electrolytic; SMD; 330uF; 6.3VDC; ?8x10.2mm; ?20%; 2000h
PANASONIC EEEHC1A330R | Capacitor: electrolytic; SMD; 33uF; 10VDC; ?5x5.8mm; ?20%; 3000h
PANASONIC EEEHC1H330P | Capacitor: electrolytic; SMD; 33uF; 50VDC; ?8x10.2mm; ?20%; 5000h
PANASONIC EEEHD1A331AP | Capacitor: electrolytic; SMD; 330uF; 10VDC; ?8x10.2mm; ?20%; 5000h
SR PASSIVES CE22/35-SMDHT | Capacitor: electrolytic; SMD; 22uF; 35VDC; ?6.3x5.8mm; ?20%; 2000h
TE Connectivity TYEH1H475E55MTR | Capacitor: electrolytic; SMD; 4.7uF; 50VDC; ?5x5.3mm; ?20%; 2000h
VISHAY GRC00DD3311HTNL | Capacitor: electrolytic; THT; 330uF; 50VDC; Pitch: 5mm; ?20%; 2000h
VISHAY GRC00DE1021ETNL | Capacitor: electrolytic; THT; 1000uF; 25VDC; Pitch: 5mm; ?20%; 2000h
YAGEO SE025M1000A5S-1019 | Capacitor: electrolytic; THT; 1000uF; 25VDC; ?10x19mm; Pitch: 5mm
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