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RT1N430M SemiConductor - CASE: SOT323 MAKE: Mitsubishi Electric

Mitsubishi Electric . RT1N430M

Attributes

Brand name, Manufacturer name, ManufacturerMitsubishi Electric
Attribute00SOT323
Attribute01Transistor Silicon Pre-Biased-NPN
Attribute02Mitsubishi
Attribute03Pre-Biased-NPN
Attribute040.2 W
Attribute05, Attribute0650 V
Attribute076 V
Attribute080.1 A
Attribute09150 ?C
Attribute10200 MHz
Attribute11100
Attribute12N6
Attribute134.7 kOhm
Attribute14552692
AttributeKey00Case
AttributeKey01Type
AttributeKey02Manufacturer
AttributeKey03Polarity
AttributeKey04Maximum Collector Power Dissipation (Pc)
AttributeKey05Maximum Collector-Base Voltage |Vcb|
AttributeKey06Maximum Collector-Emitter Voltage |Vce|
AttributeKey07Maximum Emitter-Base Voltage |Veb|
AttributeKey08Maximum Collector Current |Ic max|
AttributeKey09Max. Operating Junction Temperature (Tj)
AttributeKey10Transition Frequency (ft):
AttributeKey11Forward Current Transfer Ratio (hFE), MIN
AttributeKey12SMD Transistor Code
AttributeKey13Built in Bias Resistor R1
AttributeKey14SKU
keywordsBuy RT1N430M, RT1N430M, RT1N430M SI-NPN-DIGI
moq, multiple1
MPN, SKURT1N430M
originalCurrency{'currency': 'GBP'}
qtyInStock0
snippetRT1N430M SemiConductor - CASE: SOT323 MAKE: Mitsubishi Electric

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Little DiodeRT1N430M11
Win SourceRT1N430M135001