As an Amazon Associate, we earn from qualifying purchases.

ATF-54143-TR1G Broadcom Limited | Discrete Semiconductor Products | DigiKey

Attributes

Brand name, Manufacturer name, Attribute01Broadcom Limited
ManufacturerBroadcom Limited Avago Technologies
Attribute00Discrete Semiconductor Products
Attribute02-
Attribute03Tape & Reel (TR)
Attribute04Obsolete
Attribute05pHEMT FET
Attribute062GHz
Attribute0716.6dB
Attribute083 V
Attribute09120mA
Attribute100.5dB
Attribute1160 mA
Attribute1220.4dBm
Attribute135 V
Attribute14SC-82A, SOT-343
Attribute15SOT-343
Attribute16ATF-54143
AttributeKey00Category
AttributeKey01Mfr
AttributeKey02Series
AttributeKey03Package
AttributeKey04Product Status
AttributeKey05Transistor Type
AttributeKey06Frequency
AttributeKey07Gain
AttributeKey08Voltage - Test
AttributeKey09Current Rating (Amps)
AttributeKey10Noise Figure
AttributeKey11Current - Test
AttributeKey12Power - Output
AttributeKey13Voltage - Rated
AttributeKey14Package / Case
AttributeKey15Supplier Device Package
AttributeKey16Base Product Number
Extra Product NameATF-54143-TR1G Broadcom Limited | Discrete Semiconductor Products | DigiKey
atoms, moq, multiple1
extraShipping, qtyInStock0
MPN, Part Number, PartNumberATF-54143-TR1G
SKU768391
snippetRF Mosfet pHEMT FET 3 V 60 mA 2GHz 16.6dB 20.4dBm SOT-343
Product Group, ProductGroupBISS
AsinB00LWSA086 B00LWSA1NU B00LWSA2TS B00LWSA450 B00M1TCCL8
BrandAVAGO TECHNOLOGIES
Case, PackageQuantity1 10 100 5 50
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 630-ATF-54143-TR1G X1 MS 630-ATF-54143-TR1G X10 MS 630-ATF-54143-TR1G X100 MS 630-ATF-54143-TR1G X5 MS 630-ATF-54143-TR1G X50
FeatureManufacturer: Avago Technologies Product Category: Transistors RF JFET RoHS: Type: GaAs EpHEMT Transistor Polarity: N-Channel Forward Transconductance - Min: 410 mmho Drain Source Voltage VDS: 5 V Gate-Source Breakdown Voltage: - 5 V to 1 V Continuous Drain Current: 120 mA Frequency: 2 GHz Gain: 16.6 dB Power Dissipation: 725 mW Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT
Label, Man, Publisher, StudioAvago Technologies
ProductTypeNameELECTRONIC_COMPONENT
TitleTransistors RF JFET Transistor GaAs Single Voltage (1 piece) Transistors RF JFET Transistor GaAs Single Voltage (10 pieces) Transistors RF JFET Transistor GaAs Single Voltage (100 pieces) Transistors RF JFET Transistor GaAs Single Voltage (5 pieces) Transistors RF JFET Transistor GaAs Single Voltage (50 pieces)

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Digi-Key76839111
RadwellATF-54143-TR1G111 @ $4.26
1SourceATF-54143-TR1G11
HotendaH19115861600011 @ $1.88
Newark96K651211
4 Star ElectronicsATF54143TR1G11
Digi-Key76841811
Digi-Key113718011
Newark63J888811
jotrin.comJT25-ATF-54143-TR1G1750391

Related on Amazon

As an Amazon Associate, we earn from qualifying purchases. (paid link) CERTAIN CONTENT THAT APPEARS ON THIS SITE COMES FROM AMAZON. THIS CONTENT IS PROVIDED 'AS IS' AND IS SUBJECT TO CHANGE OR REMOVAL AT ANY TIME.

Transistors RF JFET Transistor GaAs Single Voltage (10 pieces)
Brand: AVAGO TECHNOLOGIES
Catalog
FeatureManufacturer: Avago Technologies Product Category: Transistors RF JFET RoHS: Type: GaAs EpHEMT Transistor Polarity: N-Channel Forward Transconductance - Min: 410 mmho Drain Source Voltage VDS: 5 V Gate-Source Breakdown Voltage: - 5 V to 1 V Continuous Drain Current: 120 mA Frequency: 2 GHz Gain: 16.6 dB Power Dissipation: 725 mW Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNATF-54143-TR1G
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerAvago Technologies
Analytics
Last Price$58.76
View on Amazon (paid link)
Transistors RF JFET Transistor GaAs Single Voltage (100 pieces)
Brand: AVAGO TECHNOLOGIES
Catalog
FeatureManufacturer: Avago Technologies Product Category: Transistors RF JFET RoHS: Type: GaAs EpHEMT Transistor Polarity: N-Channel Forward Transconductance - Min: 410 mmho Drain Source Voltage VDS: 5 V Gate-Source Breakdown Voltage: - 5 V to 1 V Continuous Drain Current: 120 mA Frequency: 2 GHz Gain: 16.6 dB Power Dissipation: 725 mW Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNATF-54143-TR1G
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerAvago Technologies
Analytics
Last Price$467.28
View on Amazon (paid link)
Transistors RF JFET Transistor GaAs Single Voltage (5 pieces)
Brand: AVAGO TECHNOLOGIES
Catalog
FeatureManufacturer: Avago Technologies Product Category: Transistors RF JFET RoHS: Type: GaAs EpHEMT Transistor Polarity: N-Channel Forward Transconductance - Min: 410 mmho Drain Source Voltage VDS: 5 V Gate-Source Breakdown Voltage: - 5 V to 1 V Continuous Drain Current: 120 mA Frequency: 2 GHz Gain: 16.6 dB Power Dissipation: 725 mW Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNATF-54143-TR1G
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerAvago Technologies
Analytics
Last Price$32.73
View on Amazon (paid link)
Transistors RF JFET Transistor GaAs Single Voltage (50 pieces)
Brand: AVAGO TECHNOLOGIES
Catalog
FeatureManufacturer: Avago Technologies Product Category: Transistors RF JFET RoHS: Type: GaAs EpHEMT Transistor Polarity: N-Channel Forward Transconductance - Min: 410 mmho Drain Source Voltage VDS: 5 V Gate-Source Breakdown Voltage: - 5 V to 1 V Continuous Drain Current: 120 mA Frequency: 2 GHz Gain: 16.6 dB Power Dissipation: 725 mW Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNATF-54143-TR1G
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerAvago Technologies
Analytics
Last Price$285.12
View on Amazon (paid link)
Transistors RF JFET Transistor GaAs Single Voltage (1 piece)
Brand: AVAGO TECHNOLOGIES
Catalog
FeatureManufacturer: Avago Technologies Product Category: Transistors RF JFET RoHS: Type: GaAs EpHEMT Transistor Polarity: N-Channel Forward Transconductance - Min: 410 mmho Drain Source Voltage VDS: 5 V Gate-Source Breakdown Voltage: - 5 V to 1 V Continuous Drain Current: 120 mA Frequency: 2 GHz Gain: 16.6 dB Power Dissipation: 725 mW Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNATF-54143-TR1G
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerAvago Technologies
Analytics
BuyboxYes
Offers1
Case Qty1 units
Atom Count1
Last Price$7.32
View on Amazon (paid link)