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ATF-35143-TR1G Broadcom Limited | Discrete Semiconductor Products | DigiKey

Broadcom Limited . ATF-35143-TR1G

Attributes

Brand name, Manufacturer name, Attribute01Broadcom Limited
ManufacturerBroadcom Limited Avago Technologies
Attribute00Discrete Semiconductor Products
Attribute02-
Attribute03Tape & Reel (TR)
Attribute04Obsolete
Attribute05pHEMT FET
Attribute062GHz
Attribute0718dB
Attribute082 V
Attribute0980mA
Attribute100.4dB
Attribute1115 mA
Attribute1210dBm
Attribute135.5 V
Attribute14SC-82A, SOT-343
Attribute15SOT-343
Attribute16ATF-35143
AttributeKey00Category
AttributeKey01Mfr
AttributeKey02Series
AttributeKey03Package
AttributeKey04Product Status
AttributeKey05Transistor Type
AttributeKey06Frequency
AttributeKey07Gain
AttributeKey08Voltage - Test
AttributeKey09Current Rating (Amps)
AttributeKey10Noise Figure
AttributeKey11Current - Test
AttributeKey12Power - Output
AttributeKey13Voltage - Rated
AttributeKey14Package / Case
AttributeKey15Supplier Device Package
AttributeKey16Base Product Number
Extra Product NameATF-35143-TR1G Broadcom Limited | Discrete Semiconductor Products | DigiKey
atoms, moq, multiple1
extraShipping, qtyInStock0
MPN, Part Number, PartNumberATF-35143-TR1G
SKU1235439
snippetRF Mosfet pHEMT FET 2 V 15 mA 2GHz 18dB 10dBm SOT-343
Product Group, ProductGroupBISS
AsinB00LWS8G28 B00LWS8HEK B00LWS8ITY B00LWS8K24 B00M1TAMAQ
BrandAVAGO TECHNOLOGIES
Case, PackageQuantity1 10 100 5 50
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 630-ATF-35143-TR1G X1 MS 630-ATF-35143-TR1G X10 MS 630-ATF-35143-TR1G X100 MS 630-ATF-35143-TR1G X5 MS 630-ATF-35143-TR1G X50
FeatureManufacturer: Avago Technologies Product Category: Transistors RF JFET RoHS: Type: GaAs pHEMT Transistor Polarity: N-Channel Forward Transconductance - Min: 120 mmho Drain Source Voltage VDS: 5.5 V Gate-Source Breakdown Voltage: - 5 V Continuous Drain Current: 80 mA Frequency: 2 GHz Gain: 18 dB Power Dissipation: 300 mW Maximum Operating Temperature: + 160 C Mounting Style: SMD/SMT
Label, Man, Publisher, StudioAvago Technologies
ProductTypeNameELECTRONIC_COMPONENT
TitleTransistors RF JFET Transistor GaAs Low Noise (1 piece) Transistors RF JFET Transistor GaAs Low Noise (10 pieces) Transistors RF JFET Transistor GaAs Low Noise (100 pieces) Transistors RF JFET Transistor GaAs Low Noise (5 pieces) Transistors RF JFET Transistor GaAs Low Noise (50 pieces)

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Digi-Key123543911
RadwellATF-35143-TR1G300030001 @ $1.35
1SourceATF-35143-TR1G11
HotendaH19116571300011 @ $0.71
Freelance ElectronicsATF-35143-TR1G111 @ $0.30
Digi-Key196649011
Digi-Key196654611
Newark09X176011
jotrin.comJT25-ATF-35143-TR1G12081

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Transistors RF JFET Transistor GaAs Low Noise (10 pieces)
Brand: AVAGO TECHNOLOGIES
Catalog
FeatureManufacturer: Avago Technologies Product Category: Transistors RF JFET RoHS: Type: GaAs pHEMT Transistor Polarity: N-Channel Forward Transconductance - Min: 120 mmho Drain Source Voltage VDS: 5.5 V Gate-Source Breakdown Voltage: - 5 V Continuous Drain Current: 80 mA Frequency: 2 GHz Gain: 18 dB Power Dissipation: 300 mW Maximum Operating Temperature: + 160 C Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNATF-35143-TR1G
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerAvago Technologies
Analytics
Last Price$23.46
View on Amazon (paid link)
Transistors RF JFET Transistor GaAs Low Noise (100 pieces)
Brand: AVAGO TECHNOLOGIES
Catalog
FeatureManufacturer: Avago Technologies Product Category: Transistors RF JFET RoHS: Type: GaAs pHEMT Transistor Polarity: N-Channel Forward Transconductance - Min: 120 mmho Drain Source Voltage VDS: 5.5 V Gate-Source Breakdown Voltage: - 5 V Continuous Drain Current: 80 mA Frequency: 2 GHz Gain: 18 dB Power Dissipation: 300 mW Maximum Operating Temperature: + 160 C Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNATF-35143-TR1G
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerAvago Technologies
Analytics
Last Price$182.96
View on Amazon (paid link)
Transistors RF JFET Transistor GaAs Low Noise (5 pieces)
Brand: AVAGO TECHNOLOGIES
Catalog
FeatureManufacturer: Avago Technologies Product Category: Transistors RF JFET RoHS: Type: GaAs pHEMT Transistor Polarity: N-Channel Forward Transconductance - Min: 120 mmho Drain Source Voltage VDS: 5.5 V Gate-Source Breakdown Voltage: - 5 V Continuous Drain Current: 80 mA Frequency: 2 GHz Gain: 18 dB Power Dissipation: 300 mW Maximum Operating Temperature: + 160 C Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNATF-35143-TR1G
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerAvago Technologies
Analytics
Last Price$13.86
View on Amazon (paid link)
Transistors RF JFET Transistor GaAs Low Noise (50 pieces)
Brand: AVAGO TECHNOLOGIES
Catalog
FeatureManufacturer: Avago Technologies Product Category: Transistors RF JFET RoHS: Type: GaAs pHEMT Transistor Polarity: N-Channel Forward Transconductance - Min: 120 mmho Drain Source Voltage VDS: 5.5 V Gate-Source Breakdown Voltage: - 5 V Continuous Drain Current: 80 mA Frequency: 2 GHz Gain: 18 dB Power Dissipation: 300 mW Maximum Operating Temperature: + 160 C Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNATF-35143-TR1G
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerAvago Technologies
Analytics
Last Price$117.3
View on Amazon (paid link)
Transistors RF JFET Transistor GaAs Low Noise (1 piece)
Brand: AVAGO TECHNOLOGIES
Catalog
FeatureManufacturer: Avago Technologies Product Category: Transistors RF JFET RoHS: Type: GaAs pHEMT Transistor Polarity: N-Channel Forward Transconductance - Min: 120 mmho Drain Source Voltage VDS: 5.5 V Gate-Source Breakdown Voltage: - 5 V Continuous Drain Current: 80 mA Frequency: 2 GHz Gain: 18 dB Power Dissipation: 300 mW Maximum Operating Temperature: + 160 C Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNATF-35143-TR1G
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerAvago Technologies
Analytics
BuyboxYes
Offers1
Case Qty1 units
Atom Count1
Last Price$2.93
View on Amazon (paid link)