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ATF-50189-BLK Broadcom Limited | Discrete Semiconductor Products | DigiKey

Attributes

Brand name, Manufacturer name, Attribute01Broadcom Limited
ManufacturerBroadcom Limited Avago Technologies
Attribute00Discrete Semiconductor Products
Attribute02-
Attribute03Tape & Reel (TR)
Attribute04Obsolete
Attribute05E-pHEMT
Attribute062GHz
Attribute0715.5dB
Attribute084.5 V
Attribute091A
Attribute101.1dB
Attribute11280 mA
Attribute1229dBm
Attribute13TO-243AA
Attribute14SOT-89
AttributeKey00Category
AttributeKey01Mfr
AttributeKey02Series
AttributeKey03Package
AttributeKey04Product Status
AttributeKey05Transistor Type
AttributeKey06Frequency
AttributeKey07Gain
AttributeKey08Voltage - Test
AttributeKey09Current Rating (Amps)
AttributeKey10Noise Figure
AttributeKey11Current - Test
AttributeKey12Power - Output
AttributeKey13Package / Case
AttributeKey14Supplier Device Package
Extra Product NameATF-50189-BLK Broadcom Limited | Discrete Semiconductor Products | DigiKey
atoms, moq, multiple1
extraShipping, qtyInStock0
MPN, Part Number, PartNumberATF-50189-BLK
SKU7596355
snippetRF Mosfet E-pHEMT 4.5 V 280 mA 2GHz 15.5dB 29dBm SOT-89
Product Group, ProductGroupBISS
AsinB00LWS96RW B00LWS987K B00LWS99QK B00M1TBG60
BrandAVAGO TECHNOLOGIES
Case, PackageQuantity1 10 5 50
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 630-ATF-50189-BLK X1 MS 630-ATF-50189-BLK X10 MS 630-ATF-50189-BLK X5 MS 630-ATF-50189-BLK X50
FeatureManufacturer: Avago Technologies Product Category: Transistors RF JFET RoHS: Type: GaAs EpHEMT Forward Transconductance - Min: 2294 mmho Drain Source Voltage VDS: 7 V Gate-Source Breakdown Voltage: - 5 V to 0.8 V Maximum Drain Gate Voltage: - 5 V to + 1 V Continuous Drain Current: 1 A Frequency: 2 GHz Gain: 15.5 dB Power Dissipation: 2.25 W Maximum Operating Temperature: + 150 C
Label, Man, Publisher, StudioAvago Technologies
ProductTypeNameELECTRONIC_COMPONENT
TitleTransistors RF JFET Transistor GaAs High Linearity (1 piece) Transistors RF JFET Transistor GaAs High Linearity (10 pieces) Transistors RF JFET Transistor GaAs High Linearity (5 pieces) Transistors RF JFET Transistor GaAs High Linearity (50 pieces)

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Digi-Key759635511
RadwellATF-50189-BLK111 @ $8.78
1SourceATF-50189-BLK11
HotendaH1911682189311 @ $6.47, 10 @ $5.84, 100 @ $4.84, 500 @ $4.21
swatee.comATF-50189-BLK18111 @ $10.73
Newark58Y4615111 @ $0.00
Digi-Key123327311
Newark94H843311
jotrin.comJT25-ATF-50189-BLK12081

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Transistors RF JFET Transistor GaAs High Linearity (10 pieces)
Brand: AVAGO TECHNOLOGIES
Catalog
FeatureManufacturer: Avago Technologies Product Category: Transistors RF JFET RoHS: Type: GaAs EpHEMT Forward Transconductance - Min: 2294 mmho Drain Source Voltage VDS: 7 V Gate-Source Breakdown Voltage: - 5 V to 0.8 V Maximum Drain Gate Voltage: - 5 V to + 1 V Continuous Drain Current: 1 A Frequency: 2 GHz Gain: 15.5 dB Power Dissipation: 2.25 W Maximum Operating Temperature: + 150 C
CategoryIndustrial & Scientific
MPNATF-50189-BLK
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerAvago Technologies
Analytics
Last Price$99.35
View on Amazon (paid link)
Transistors RF JFET Transistor GaAs High Linearity (5 pieces)
Brand: AVAGO TECHNOLOGIES
Catalog
FeatureManufacturer: Avago Technologies Product Category: Transistors RF JFET RoHS: Type: GaAs EpHEMT Forward Transconductance - Min: 2294 mmho Drain Source Voltage VDS: 7 V Gate-Source Breakdown Voltage: - 5 V to 0.8 V Maximum Drain Gate Voltage: - 5 V to + 1 V Continuous Drain Current: 1 A Frequency: 2 GHz Gain: 15.5 dB Power Dissipation: 2.25 W Maximum Operating Temperature: + 150 C
CategoryIndustrial & Scientific
MPNATF-50189-BLK
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerAvago Technologies
Analytics
Last Price$55.0
View on Amazon (paid link)
Transistors RF JFET Transistor GaAs High Linearity (50 pieces)
Brand: AVAGO TECHNOLOGIES
Catalog
FeatureManufacturer: Avago Technologies Product Category: Transistors RF JFET RoHS: Type: GaAs EpHEMT Forward Transconductance - Min: 2294 mmho Drain Source Voltage VDS: 7 V Gate-Source Breakdown Voltage: - 5 V to 0.8 V Maximum Drain Gate Voltage: - 5 V to + 1 V Continuous Drain Current: 1 A Frequency: 2 GHz Gain: 15.5 dB Power Dissipation: 2.25 W Maximum Operating Temperature: + 150 C
CategoryIndustrial & Scientific
MPNATF-50189-BLK
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerAvago Technologies
Analytics
Last Price$482.13
View on Amazon (paid link)
Transistors RF JFET Transistor GaAs High Linearity (1 piece)
Brand: AVAGO TECHNOLOGIES
Catalog
FeatureManufacturer: Avago Technologies Product Category: Transistors RF JFET RoHS: Type: GaAs EpHEMT Forward Transconductance - Min: 2294 mmho Drain Source Voltage VDS: 7 V Gate-Source Breakdown Voltage: - 5 V to 0.8 V Maximum Drain Gate Voltage: - 5 V to + 1 V Continuous Drain Current: 1 A Frequency: 2 GHz Gain: 15.5 dB Power Dissipation: 2.25 W Maximum Operating Temperature: + 150 C
CategoryIndustrial & Scientific
MPNATF-50189-BLK
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerAvago Technologies
Analytics
Case Qty1 units
Atom Count1
Last Price$11.65
View on Amazon (paid link)