As an Amazon Associate, we earn from qualifying purchases.

ATF-53189-BLK Broadcom Limited | Discrete Semiconductor Products | DigiKey

Broadcom Limited . ATF-53189-BLK

Gallery

Attributes

Brand name, Manufacturer name, Attribute00Broadcom Limited
ManufacturerBroadcom Limited Avago Technologies
Attribute01-
Attribute02Obsolete
Attribute03E-pHEMT
Attribute04900MHz
Attribute0517.2dB
Attribute06300mA
Attribute070.8dB
Attribute0821.7dBm
Attribute09TO-243AA
Attribute10SOT-89-3
Attribute114 V
Attribute12135 mA
Attribute137 V
AttributeKey00Mfr
AttributeKey01Series
AttributeKey02Part Status
AttributeKey03Transistor Type
AttributeKey04Frequency
AttributeKey05Gain
AttributeKey06Current Rating (Amps)
AttributeKey07Noise Figure
AttributeKey08Power - Output
AttributeKey09Package / Case
AttributeKey10Supplier Device Package
AttributeKey11Voltage - Test
AttributeKey12Current - Test
AttributeKey13Voltage - Rated
Extra Product NameATF-53189-BLK Broadcom Limited | Discrete Semiconductor Products | DigiKey
atoms, minimum, moq, multiple1
MPN, Part Number, PartNumberATF-53189-BLK
qtyInStock0
SKU516-2193-ND
Product Group, ProductGroupBISS
AsinB00LWS9J6K B00LWS9K6Y B00M1TBUAW
BrandAVAGO TECHNOLOGIES
Case, PackageQuantity1 10 5
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 630-ATF-53189-BLK X1 MS 630-ATF-53189-BLK X10 MS 630-ATF-53189-BLK X5
FeatureManufacturer: Avago Technologies Product Category: Transistors RF JFET RoHS: Type: GaAs EpHEMT Forward Transconductance - Min: 650 mmho Drain Source Voltage VDS: 7 V Gate-Source Breakdown Voltage: - 5 V to 1 V Continuous Drain Current: 300 mA Frequency: 2 GHz Gain: 15.5 dB Power Dissipation: 1 W Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-89
Label, Man, Publisher, StudioAvago Technologies
ProductTypeNameELECTRONIC_COMPONENT
TitleTransistors RF JFET Transistor GaAs High Linearity (1 piece) Transistors RF JFET Transistor GaAs High Linearity (10 pieces) Transistors RF JFET Transistor GaAs High Linearity (5 pieces)

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Digi-Key516-2193-ND11
RadwellATF-53189-BLK3003001 @ $3.93
RS Online812052811
HotendaH1912138134811 @ $4.79, 10 @ $4.30, 100 @ $3.53, 500 @ $3.00
Digi-Key123333211
Newark72J790911
Newark09X176111
jotrin.comJT25-ATF-53189-BLK1690001

Related on Amazon

As an Amazon Associate, we earn from qualifying purchases. (paid link) CERTAIN CONTENT THAT APPEARS ON THIS SITE COMES FROM AMAZON. THIS CONTENT IS PROVIDED 'AS IS' AND IS SUBJECT TO CHANGE OR REMOVAL AT ANY TIME.

Transistors RF JFET Transistor GaAs High Linearity (10 pieces)
Brand: AVAGO TECHNOLOGIES
Catalog
FeatureManufacturer: Avago Technologies Product Category: Transistors RF JFET RoHS: Type: GaAs EpHEMT Forward Transconductance - Min: 650 mmho Drain Source Voltage VDS: 7 V Gate-Source Breakdown Voltage: - 5 V to 1 V Continuous Drain Current: 300 mA Frequency: 2 GHz Gain: 15.5 dB Power Dissipation: 1 W Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-89
CategoryIndustrial & Scientific
MPNATF-53189-BLK
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerAvago Technologies
Analytics
Last Price$73.16
View on Amazon (paid link)
Transistors RF JFET Transistor GaAs High Linearity (5 pieces)
Brand: AVAGO TECHNOLOGIES
Catalog
FeatureManufacturer: Avago Technologies Product Category: Transistors RF JFET RoHS: Type: GaAs EpHEMT Forward Transconductance - Min: 650 mmho Drain Source Voltage VDS: 7 V Gate-Source Breakdown Voltage: - 5 V to 1 V Continuous Drain Current: 300 mA Frequency: 2 GHz Gain: 15.5 dB Power Dissipation: 1 W Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-89
CategoryIndustrial & Scientific
MPNATF-53189-BLK
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerAvago Technologies
Analytics
Last Price$40.72
View on Amazon (paid link)
Transistors RF JFET Transistor GaAs High Linearity (1 piece)
Brand: AVAGO TECHNOLOGIES
Catalog
FeatureManufacturer: Avago Technologies Product Category: Transistors RF JFET RoHS: Type: GaAs EpHEMT Forward Transconductance - Min: 650 mmho Drain Source Voltage VDS: 7 V Gate-Source Breakdown Voltage: - 5 V to 1 V Continuous Drain Current: 300 mA Frequency: 2 GHz Gain: 15.5 dB Power Dissipation: 1 W Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-89
CategoryIndustrial & Scientific
MPNATF-53189-BLK
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerAvago Technologies
Analytics
Last Price$9.11
View on Amazon (paid link)