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VMMK-1218-BLKG Broadcom Limited | Discrete Semiconductor Products | DigiKey

Broadcom Limited . VMMK-1218-BLKG

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Attributes

Brand name, Manufacturer name, Attribute01Broadcom Limited
ManufacturerBroadcom Limited Avago Technologies
Attribute00Discrete Semiconductor Products
Attribute02-
Attribute03Strip
Attribute04Obsolete
Attribute05E-pHEMT
Attribute0610GHz
Attribute079dB
Attribute08100mA
Attribute090.81dB
Attribute1012dBm
Attribute110402 (1005 Metric)
Attribute120402
Attribute133 V
Attribute1420 mA
Attribute155 V
AttributeKey00Category
AttributeKey01Mfr
AttributeKey02Series
AttributeKey03Package
AttributeKey04Part Status
AttributeKey05Transistor Type
AttributeKey06Frequency
AttributeKey07Gain
AttributeKey08Current Rating (Amps)
AttributeKey09Noise Figure
AttributeKey10Power - Output
AttributeKey11Package / Case
AttributeKey12Supplier Device Package
AttributeKey13Voltage - Test
AttributeKey14Current - Test
AttributeKey15Voltage - Rated
Extra Product NameVMMK-1218-BLKG Broadcom Limited | Discrete Semiconductor Products | DigiKey
atoms, moq, multiple1
MPN, Part Number, PartNumberVMMK-1218-BLKG
qtyInStock0
SKU516-2214-ND
Product Group, ProductGroupBISS
AsinB00LWSWXQI B00LWSWZR0 B00LWSX20O B00LWSX4HA B00M1TB9ZI
BrandAVAGO TECHNOLOGIES
Case, PackageQuantity1 10 100 5 50
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 630-VMMK-1218-BLKG X1 MS 630-VMMK-1218-BLKG X10 MS 630-VMMK-1218-BLKG X100 MS 630-VMMK-1218-BLKG X5 MS 630-VMMK-1218-BLKG X50
FeatureManufacturer: Avago Technologies Product Category: Transistors RF JFET RoHS: Type: GaAs EpHEMT Forward Transconductance - Min: 200 mS Drain Source Voltage VDS: 5 V Gate-Source Breakdown Voltage: - 5 V to 1 V Continuous Drain Current: 100 mA Frequency: 10 GHz Gain: 9 dB Power Dissipation: 300 mW Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: WLP 0402
Label, Man, Publisher, StudioAvago Technologies
ProductTypeNameELECTRONIC_COMPONENT
TitleTransistors RF JFET LNA FET in Microcap DC-18GHz (1 piece) Transistors RF JFET LNA FET in Microcap DC-18GHz (10 pieces) Transistors RF JFET LNA FET in Microcap DC-18GHz (100 pieces) Transistors RF JFET LNA FET in Microcap DC-18GHz (5 pieces) Transistors RF JFET LNA FET in Microcap DC-18GHz (50 pieces)

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Digi-Key516-2214-ND11
RadwellVMMK-1218-BLKG4004001 @ $3.86
HotendaH191166711
swatee.comVMMK-1218-BLKG148811 @ $5.32
Newark58Y554211
Digi-Key222093211
Newark86M601911
jotrin.comJT25-VMMK-1218-BLKG112001

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Transistors RF JFET LNA FET in Microcap DC-18GHz (10 pieces)
Brand: AVAGO TECHNOLOGIES
Catalog
FeatureManufacturer: Avago Technologies Product Category: Transistors RF JFET RoHS: Type: GaAs EpHEMT Forward Transconductance - Min: 200 mS Drain Source Voltage VDS: 5 V Gate-Source Breakdown Voltage: - 5 V to 1 V Continuous Drain Current: 100 mA Frequency: 10 GHz Gain: 9 dB Power Dissipation: 300 mW Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: WLP 0402
CategoryIndustrial & Scientific
MPNVMMK-1218-BLKG
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerAvago Technologies
View on Amazon (paid link)
Transistors RF JFET LNA FET in Microcap DC-18GHz (100 pieces)
Brand: AVAGO TECHNOLOGIES
Catalog
FeatureManufacturer: Avago Technologies Product Category: Transistors RF JFET RoHS: Type: GaAs EpHEMT Forward Transconductance - Min: 200 mS Drain Source Voltage VDS: 5 V Gate-Source Breakdown Voltage: - 5 V to 1 V Continuous Drain Current: 100 mA Frequency: 10 GHz Gain: 9 dB Power Dissipation: 300 mW Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: WLP 0402
CategoryIndustrial & Scientific
MPNVMMK-1218-BLKG
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerAvago Technologies
View on Amazon (paid link)
Transistors RF JFET LNA FET in Microcap DC-18GHz (5 pieces)
Brand: AVAGO TECHNOLOGIES
Catalog
FeatureManufacturer: Avago Technologies Product Category: Transistors RF JFET RoHS: Type: GaAs EpHEMT Forward Transconductance - Min: 200 mS Drain Source Voltage VDS: 5 V Gate-Source Breakdown Voltage: - 5 V to 1 V Continuous Drain Current: 100 mA Frequency: 10 GHz Gain: 9 dB Power Dissipation: 300 mW Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: WLP 0402
CategoryIndustrial & Scientific
MPNVMMK-1218-BLKG
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerAvago Technologies
View on Amazon (paid link)
Transistors RF JFET LNA FET in Microcap DC-18GHz (50 pieces)
Brand: AVAGO TECHNOLOGIES
Catalog
FeatureManufacturer: Avago Technologies Product Category: Transistors RF JFET RoHS: Type: GaAs EpHEMT Forward Transconductance - Min: 200 mS Drain Source Voltage VDS: 5 V Gate-Source Breakdown Voltage: - 5 V to 1 V Continuous Drain Current: 100 mA Frequency: 10 GHz Gain: 9 dB Power Dissipation: 300 mW Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: WLP 0402
CategoryIndustrial & Scientific
MPNVMMK-1218-BLKG
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerAvago Technologies
View on Amazon (paid link)
Transistors RF JFET LNA FET in Microcap DC-18GHz (1 piece)
Brand: AVAGO TECHNOLOGIES
Catalog
FeatureManufacturer: Avago Technologies Product Category: Transistors RF JFET RoHS: Type: GaAs EpHEMT Forward Transconductance - Min: 200 mS Drain Source Voltage VDS: 5 V Gate-Source Breakdown Voltage: - 5 V to 1 V Continuous Drain Current: 100 mA Frequency: 10 GHz Gain: 9 dB Power Dissipation: 300 mW Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: WLP 0402
CategoryIndustrial & Scientific
MPNVMMK-1218-BLKG
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerAvago Technologies
View on Amazon (paid link)