NXP USA Inc. PSMN2R4-30YLDX
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Digi-Key | 568-11375-1-ND | 1 | 1 | 1 @ $0.93, 10 @ $0.82, 100 @ $0.63, 500 @ $0.50 | |
| Digi-Key | 4754328 | 1 | 1 | 1 @ $1.13, 10 @ $1.01, 100 @ $0.79, 500 @ $0.65 | |
| Hotenda | H1816093 | 1 | 1500 | 1 | 1 @ $0.39 |
| TME | PSMN2R4-30YLDX | 1 | 1 | 1 @ $1.18, 5 @ $0.80, 25 @ $0.72, 100 @ $0.63, 500 @ $0.57 | |
| iodParts | PSMN2R4-30YLDX | 1 | 94500 | 1 | |
| Digi-Key | 4754334 | 1 | 627 | 1 | 1 @ $0.71, 10 @ $0.62, 25 @ $0.59, 100 @ $0.43, 500 @ $0.36 |
| Digi-Key | 4754340 | 1 | 1 | 1 @ $1.13, 10 @ $1.01, 100 @ $0.79, 500 @ $0.65 | |
| Digi-Key | 13524978 | 1 | 1 | 1 @ $1.13, 10 @ $1.01, 100 @ $0.79, 500 @ $0.65, 1500 @ $0.51, 3000 @ $0.48 | |
| Newark | 27X7567 | 1 | 1 |
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MOSFET 30V N-Channel 2.4mOhm (1 piece)
Brand: NXP Semiconductors
Catalog
| Feature | <b>Price For:</b> Pack of 1 <b>Manufacturer</b>: NXP <b>Product Category</b>: MOSFET <b>RoHS</b>: <b>Id - Continuous Drain Current</b>: 100 A <b>Vds - Drain-Source Breakdown Voltage</b>: 30 V <b>Rds On - Drain-Source Resistance</b>: 3.1 mOhms <b>Transistor Polarity</b>: N-Channel <b>Vgs - Gate-Source Breakdown Voltage</b>: 2.2 V <b>Vgs th - Gate-Source Threshold Voltage</b>: 2.2 V <b>Qg - Gate Charge</b>: 31.3 nC <b>Pd - Power Dissipation</b>: 106 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | PSMN2R4-30YLDX |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | NXP Semiconductors |
MOSFET 30V N-Channel 2.4mOhm (10 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | <b>Price For:</b> Pack of 10 <b>Manufacturer</b>: NXP <b>Product Category</b>: MOSFET <b>RoHS</b>: <b>Id - Continuous Drain Current</b>: 100 A <b>Vds - Drain-Source Breakdown Voltage</b>: 30 V <b>Rds On - Drain-Source Resistance</b>: 3.1 mOhms <b>Transistor Polarity</b>: N-Channel <b>Vgs - Gate-Source Breakdown Voltage</b>: 2.2 V <b>Vgs th - Gate-Source Threshold Voltage</b>: 2.2 V <b>Qg - Gate Charge</b>: 31.3 nC <b>Pd - Power Dissipation</b>: 106 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | PSMN2R4-30YLDX |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | NXP Semiconductors |
MOSFET 30V N-Channel 2.4mOhm (100 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | <b>Price For:</b> Pack of 100 <b>Manufacturer</b>: NXP <b>Product Category</b>: MOSFET <b>RoHS</b>: <b>Id - Continuous Drain Current</b>: 100 A <b>Vds - Drain-Source Breakdown Voltage</b>: 30 V <b>Rds On - Drain-Source Resistance</b>: 3.1 mOhms <b>Transistor Polarity</b>: N-Channel <b>Vgs - Gate-Source Breakdown Voltage</b>: 2.2 V <b>Vgs th - Gate-Source Threshold Voltage</b>: 2.2 V <b>Qg - Gate Charge</b>: 31.3 nC <b>Pd - Power Dissipation</b>: 106 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | PSMN2R4-30YLDX |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | NXP Semiconductors |
MOSFET 30V N-Channel 2.4mOhm (5 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | <b>Price For:</b> Pack of 5 <b>Manufacturer</b>: NXP <b>Product Category</b>: MOSFET <b>RoHS</b>: <b>Id - Continuous Drain Current</b>: 100 A <b>Vds - Drain-Source Breakdown Voltage</b>: 30 V <b>Rds On - Drain-Source Resistance</b>: 3.1 mOhms <b>Transistor Polarity</b>: N-Channel <b>Vgs - Gate-Source Breakdown Voltage</b>: 2.2 V <b>Vgs th - Gate-Source Threshold Voltage</b>: 2.2 V <b>Qg - Gate Charge</b>: 31.3 nC <b>Pd - Power Dissipation</b>: 106 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | PSMN2R4-30YLDX |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | NXP Semiconductors |
MOSFET 30V N-Channel 2.4mOhm (50 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | <b>Price For:</b> Pack of 50 <b>Manufacturer</b>: NXP <b>Product Category</b>: MOSFET <b>RoHS</b>: <b>Id - Continuous Drain Current</b>: 100 A <b>Vds - Drain-Source Breakdown Voltage</b>: 30 V <b>Rds On - Drain-Source Resistance</b>: 3.1 mOhms <b>Transistor Polarity</b>: N-Channel <b>Vgs - Gate-Source Breakdown Voltage</b>: 2.2 V <b>Vgs th - Gate-Source Threshold Voltage</b>: 2.2 V <b>Qg - Gate Charge</b>: 31.3 nC <b>Pd - Power Dissipation</b>: 106 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | PSMN2R4-30YLDX |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | NXP Semiconductors |
PSMN2R4-30YLDX, Trans MOSFET N-CH 30V 100A 5-Pin(4+Tab) LFPAK T/R (50 Items)
Brand: NEXPERIA
PSMN2R4-30YLDX, Trans MOSFET N-CH 30V 100A 5-Pin(4+Tab) LFPAK T/R (50 items)
Analytics
| Case Qty | 50 units |
|---|---|
| Atom Count | 1 |