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Nxp Wideband Airfast Rf Power Ldmos Transistor 136-941 Mhz, 6.0 W, 7.5 V/ Reel Rohs Compliant: Yes - AFM906NT1

NXP . AFM906NT1

Attributes

Brand name, Manufacturer nameNXP
ManufacturerNXP NXP Semiconductor NXP Semiconductors
CategoryL1Semiconductors - ICs
CategoryL2More Semiconductors - ICs
Extra Product NameNxp Wideband Airfast Rf Power Ldmos Transistor 136-941 Mhz, 6.0 W, 7.5 V/ Reel Rohs Compliant: Yes - AFM906NT1
jsonUrlDataSemiconductors - ICs > More Semiconductors - ICs
moq, multiple, tierMinQty11000
MPN, Keyword, Model, ModelNumber, Model_number, PartNumber, Part_number, SkuAFM906NT1
qtyInStock0
SKU11AC2758
tierMinQty22500
tierMinQty35000
tierPrice11.56
tierPrice21.26
tierPrice31.22
urlhttps://www.newark.com/11AC2758?CMP=AFC-DATAALCHEMY
ASINB0876HWD1G B08R99FB2S
AdultProduct, Autographed, Memorabilia, TradeInEligibleFalse
AsinB0876HWD1G B08R99FB2S B09T5YNC9W
BrandNXP SEMICONDUCTOR NXP Semiconductors
ClassificationId306919011
CurrencyUSD
DisplayNameMOSFET
Height150 282 42 75
Identifier6019222939924 6098005214298
IdentifierTypeEAN
IsBrandQueryTrue
ItemClassificationBASE_PRODUCT
ItemName, Item_nameAFM906NT1, Trans RF MOSFET N-CH 30V 16-Pin DFN EP T/R (25 Items) NXP Semiconductors AFM906NT1, Trans RF MOSFET N-CH 30V 16-Pin DFN EP T/R (25 Items)
Item_type_keywordmosfet-transistors
Label, Publisher, StudioNXP Semiconductor
Linkhttps://m.media-amazon.com/images/I/11Y4qtUMcbL._SL75_.jpg https://m.media-amazon.com/images/I/11Y4qtUMcbL.jpg https://m.media-amazon.com/images/I/51fWBJxTvbL._SL75_.jpg https://m.media-amazon.com/images/I/51fWBJxTvbL.jpg
List_price59.45
MaterialNXP Semiconductors
NumberOfItems25 50
Number_of_items25
ProductGroup, WebsiteDisplayGroupNameBISS Basic
ProductType, ProductTypeNameELECTRONIC_COMPONENT
Product_descriptionEU RoHS: Compliant ECCN (US): 5A991g. Part Status: Active HTS: 8541.29.00.95 Automotive: No PPAP: No Channel Mode: Enhancement Channel Type: N Mode of Operation: CW Process Technology: LDMOS Maximum Drain Source Voltage (V): 30 Maximum Gate Source Voltage (V): 12 Maximum Gate Threshold Voltage (V): 2.6 Maximum VSWR: 65 Maximum Gate Source Leakage Current (nA): 500 Maximum IDSS (uA): 2 Typical Input Capacitance @ Vds (pF): 68.9@7.5V Typical Output Capacitance @ Vds (pF): 39.8@7.5V Typical Forward Transconductance (S): 4.4 Maximum Power Dissipation (mW): 65800 Output Power (W): 6.8(Typ) Typical Power Gain (dB): 20.3 Maximum Frequency (MHz): 941 Minimum Frequency (MHz): 136 Typical Drain Efficiency (%): 70.8 Minimum Operating Temperature (°C): -40 Maximum Operating Temperature (°C): 150 Supplier Package: DFN EP Pin Count: 16 Mounting: Surface Mount Package Height: 0.95(Max) Package Length: 6 Package Width: 4 PCB changed: 16
Product_site_launch_date2020-04-16T21:48:01.818Z 2020-12-21T22:25:44.096Z
Registration_statusnot_capable_emitting_rf_energy
TitleAFM906NT1, Trans RF MOSFET N-CH 30V 16-Pin DFN EP T/R (25 Items) AFM906NT1, Trans RF MOSFET N-CH 30V 16-Pin DFN EP T/R (50 Items)
Typeean
URLhttps://m.media-amazon.com/images/I/51fWBJxTvbL._SL75_.jpg
Unitspixels pounds
VariantMAIN
WebsiteDisplayGroupbiss_basic_display_on_website
Weight0.000625
Width150 500 75

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AFM906NT1, Trans RF MOSFET N-CH 30V 16-Pin DFN EP T/R (25 Items)
Brand: NXP SEMICONDUCTOR
Listing
Product groupBISS Basic
Product typeELECTRONIC_COMPONENT
ModelAFM906NT1
Part numberAFM906NT1
Items per pack25
LabelNXP Semiconductor
ManufacturerNXP Semiconductor
Analytics
Case Qty25 units
Atom Count1
View on Amazon (paid link)
AFM906NT1, Trans RF MOSFET N-CH 30V 16-Pin DFN EP T/R (50 Items)
Brand: NXP SEMICONDUCTOR
Listing
Product groupBISS Basic
Product typeELECTRONIC_COMPONENT
ModelAFM906NT1
Part numberAFM906NT1
Items per pack50
LabelNXP Semiconductor
ManufacturerNXP Semiconductor
Analytics
Case Qty50 units
Atom Count1
View on Amazon (paid link)
NXP Semiconductors AFM906NT1, Trans RF MOSFET N-CH 30V 16-Pin DFN EP T/R (25 Items)
Brand: NXP Semiconductors
EU RoHS: Compliant ECCN (US): 5A991g. Part Status: Active HTS: 8541.29.00.95 Automotive: No PPAP: No Channel Mode: Enhancement Channel Type: N Mode of Operation: CW Process Technology: LDMOS Maximum Drain Source Voltage (V): 30 Maximum Gate Source Voltage (V): 12 Maximum Gate Threshold Voltage (V): 2.6 Maximum VSWR: 65 Maximum Gate Source Leakage Current (nA): 500 Maximum IDSS (uA): 2 Typical Input Capacitance @ Vds (pF): 68.9@7.5V Typical Output Capacitance @ Vds (pF): 39.8@7.5V Typical Forward Transconductance (S): 4.4 Maximum Power Dissipation (mW): 65800 Output Power (W): 6.8(Typ) Typical Power Gain (dB): 20.3 Maximum Frequency (MHz): 941 Minimum Frequency (MHz): 136 Typical Drain Efficiency (%): 70.8 Minimum Operating Temperature (°C): -40 Maximum Operating Temperature (°C): 150 Supplier Package: DFN EP Pin Count: 16 Mounting: Surface Mount Package Height: 0.95(Max) Package Length: 6 Package Width: 4 PCB changed: 16
Analytics
Case Qty25 units
Atom Count1
View on Amazon (paid link)