Samsung . MZ-77Q2T0BW

Samsung latest 2nd gen V-NAND flash technology Up to 560 MB/s read and 530 MB/s write speeds Up to 2,880 TBW or 3-year limited warranty Usage Application: Client PCs Interface: SATA 6 Gbps Interface, compatible with SATA 3 Gbps & 1.5 Gbps interfaces Hardware Information Capacity: 2TB Controller: Samsung MKX Controller NAND Flash Memory: Samsung 4bit MLC V-NAND DRAM Cache Memory: 2GB LPDDR4 Dimension: 100x 69.85x 6.8(mm) Form Factor: 2.5 inch Data Security: AES 256-bit Full Disk Encryption, TCG/Opal V2.0, Encrypted Drive (IEEE1667) Performance (Up to) Sequential Read: 560 MB/s Sequential Write): 530 MB/s 4KB Ran. Read (QD1): 11,000 11,000 11,000 11,000 4KB Ran. Write (QD1): 35,000 35,000 35,000 35,000 4KB Ran. Read (QD32): 98,000 98,000 98,000 98,000 4KB Ran. Write (QD32): 88,000 88,000 88,000 88,000 Power Consumption Idle/DIPM on: 30Mw Active (Avg.) / Read/Write: 2.1W/3.0W Device Sleep: 4mW Reliability Temperature: Operating 0°C to 70°C, Non-Operating -45°C to 85°C Humidity: 5% to 95% non-condensing Shock Non-Operating: 1,500G, duration: 0.5ms, 3 axis Vibration Non-Operating: 20-2,000Hz, 20G MTBF: 1.5 million hours