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DF200R12W1H3B27BOMA1 Infineon Technologies | Discrete Semiconductor Products | DigiKey

Infineon Technologies . DF200R12W1H3B27BOMA1

Attributes

Brand name, Manufacturer name, Manufacturer, MfrInfineon Technologies
Extra Product NameDF200R12W1H3B27BOMA1 Infineon Technologies | Discrete Semiconductor Products | DigiKey
atoms, moq, multiple1
extraShipping, qtyInStock0
MPNDF200R12W1H3B27BOMA1
packaging, PackageBulk
SKU7401744
snippetIGBT Module 2 Independent 1200 V 30 A 375 W Chassis Mount Module
tierMinQty124
tierPrice171.78000
CategoryDiscrete Semiconductor Products
Series, IGBT Type-
Product StatusActive
Configuration2 Independent
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)30 A
Power - Max375 W
Vce(on) (Max) @ Vge, Ic1.3V @ 15V, 30A
Current - Collector Cutoff (Max)1 mA
Input Capacitance (Cies) @ Vce2 nF @ 25 V
InputStandard
NTC ThermistorYes
Operating Temperature-40?C ~ 150?C
Mounting TypeChassis Mount
Package / Case, Supplier Device PackageModule
Base Product NumberDF200R12

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Digi-Key74017441124 @ $71.78