As an Amazon Associate, we earn from qualifying purchases.

FF200R12KE3B2HOSA1 Infineon Technologies | Discrete Semiconductor Products | DigiKey

Infineon Technologies . FF200R12KE3B2HOSA1

Attributes

Brand name, Manufacturer name, Manufacturer, MfrInfineon Technologies
Extra Product NameFF200R12KE3B2HOSA1 Infineon Technologies | Discrete Semiconductor Products | DigiKey
atoms, moq, multiple1
extraShipping, qtyInStock0
MPNFF200R12KE3B2HOSA1
packaging, PackageTray
SKU7791799
snippetIGBT Module Half Bridge 1200 V 295 A 1050 W Chassis Mount Module
tierMinQty110
tierPrice1185.20000
CategoryDiscrete Semiconductor Products
Series, IGBT Type-
Product StatusActive
ConfigurationHalf Bridge
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)295 A
Power - Max1050 W
Vce(on) (Max) @ Vge, Ic2.15V @ 15V, 200A
Current - Collector Cutoff (Max)5 mA
Input Capacitance (Cies) @ Vce14 nF @ 25 V
InputStandard
NTC ThermistorNo
Operating Temperature-40?C ~ 125?C
Mounting TypeChassis Mount
Package / Case, Supplier Device PackageModule
Base Product NumberFF200R12

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Digi-Key77917991110 @ $185.20