IXFK360N10T IXYS | Discrete Semiconductor Products | DigiKey
IXYS IXFK360N10T | Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; TO26
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Attributes
| Brand name, Manufacturer name, Manufacturer, Mfr | IXYS |
|---|---|
| Extra Product Name | IXFK360N10T IXYS | Discrete Semiconductor Products | DigiKey |
| atoms, minimum, moq, multiple, tierMinQty1 | 1 |
| MPN | IXFK360N10T |
| qtyInStock, tierMinQty3 | 25 |
| SKU | IXFK360N10T-ND |
| tierMinQty2 | 10 |
| tierMinQty4 | 100 |
| tierMinQty5 | 500 |
| tierMinQty6 | 1000 |
| tierMinQty7 | 2500 |
| tierMinQty8 | 5000 |
| tierMinQty9 | 9,000 |
| tierPrice1 | 10.19000 |
| tierPrice2 | 9.20200 |
| tierPrice3 | 8.77400 |
| tierPrice4 | 7.27600 |
| tierPrice5 | 6.42000 |
| tierPrice6 | 5.77800 |
| tierPrice7 | 5.56400 |
| tierPrice8 | 5.26440 |
| tierPrice9 | 5.13600 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25?C | 360A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 2.9mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 3mA |
| Vgs (Max) | ?20V |
| FET Feature | - |
| Power Dissipation (Max) | 1250W (Tc) |
| Operating Temperature | -55?C ~ 175?C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-264AA (IXFK) |
| Package / Case | TO-264-3, TO-264AA |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 525 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 33000 pF @ 25 V |
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Digi-Key | IXFK360N10T-ND | 1 | 25 | 1 | 1 @ $10.19, 10 @ $9.20, 25 @ $8.77, 100 @ $7.28, 500 @ $6.42, 1000 @ $5.78, 2500 @ $5.56, 5000 @ $5.26, 9000 @ $5.14 |
| Future Electronics | 3075845 | 100 | 100 | 100 @ $9.27, 50 @ $7.97 | |
| IXFK360N10T | 1 | 2 | 1 | 1 @ $12.28, 3 @ $10.91, 10 @ $9.77, 25 @ $9.12 | |
| Digi-Key | 2354433 | 1000 | 1000 | 1 @ $13.76, 10 @ $12.64, 100 @ $10.68, 500 @ $9.50, 1000 @ $8.93 |