V221 SemiConductor - CASE: TO18 MAKE: Solitron Devices
V221 SemiConductor - CASE: TO18 MAKE: Solitron Devices
Attributes
| Brand name, Manufacturer name, Manufacturer | Solitron Devices |
|---|---|
| keywords | Buy V221, V221, V221 SemiConductor |
| moq, multiple | 1 |
| MPN, SKU | V221 |
| originalCurrency | {'currency': 'GBP'} |
| qtyInStock | 0 |
| snippet | V221 SemiConductor - CASE: TO18 MAKE: Solitron Devices |
| Type | Transistor Silicon NPN |
| Case | TO18 |
| Vbr CBO | 15 |
| Vbr CEO | 10 |
| Max PD (W) | 300m |
| C(ob) (F) | 3p |
| Derate (Amb) (W/?C) | 1.7m |
| hfe | 110 |
| Icbo Max @Vcb Max (A) | 5n |
| Polarity | NPN |
| @VCE (test) (V) | 5.0 |
| Oper Temp (?C) Max | 175 |
| @Ic (A) | .10m |
| Pinout Equivalence Number | N/A |
| Surface Mounted Yes/No | NO |
| Maximum Collector Power Dissipation (Pc) | 0.2 W |
| Maximum Collector-Base Voltage |Vcb| | 15 V |
| Maximum Collector-Emitter Voltage |Vce| | 10 V |
| Maximum Emitter-Base Voltage |Veb| | 3 V |
| Maximum Collector Current |Ic max| | 0.02 A |
| Max Operating Junction Temperature (Tj) | 200 ?C |
| Collector Capacitance (Cc) | 1.5 pF |
| Transition Frequency (ft): | 1000 MHz |
| Forward Current Transfer Ratio (hFE), MIN | 25 |
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Little Diode | V221 | 1 | 1 |