IDB1017 Semiconductor - CASE: Standard MAKE: Generic
IDB1017 Semiconductor - CASE: Standard MAKE: Generic
Attributes
| Brand name, Manufacturer name, Manufacturer | Generic |
|---|---|
| keywords | Buy IDB1017, IDB1017, IDB1017 Semiconductor |
| moq, multiple | 1 |
| MPN, SKU | IDB1017 |
| originalCurrency | {'currency': 'GBP'} |
| qtyInStock | 0 |
| snippet | IDB1017 Semiconductor - CASE: Standard MAKE: Generic |
| Case | TO220 |
| Type | Transistor Silicon PNP |
| Vbr CEO | 80 |
| Max PD (W) | 25 |
| Max hFE | 240 |
| Min hFE, Forward Current Transfer Ratio (hFE), MIN | 40 |
| Ic Max (A) | 4.0 |
| @Ic (test) (A) | 500m |
| Polarity | PNP |
| Trans Freq (Hz) Min | 9.0M |
| Pinout Equivalence Number | 3-15 |
| Surface Mounted Yes/No | NO |
| Maximum Collector Power Dissipation (Pc) | 25 W |
| Maximum Collector-Emitter Voltage |Vce| | 80 V |
| Maximum Collector Current |Ic max| | 4 A |
| Max Operating Junction Temperature (Tj) | 140 ?C |
| Transition Frequency (ft): | 9 MHz |
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Little Diode | IDB1017 | 1 | 1 |