Trans IGBT Module N-CH 1.7KV 1070A 4-pin 62MM-2
Trans IGBT Module N-CH 1.7KV 1070A 4-pin 62MM-2
Attributes
| Brand name, Manufacturer name | Infineon |
|---|---|
| Manufacturer | Infineon Infineon Technologies |
| Part Number, MPN, PartNumber | FZ600R17KE3 |
| Product Group, ProductGroup, ProductTypeName | BISS |
| Asin | B00Q7VLHY4 |
| Brand, Label, Man, Publisher, Studio | Infineon Technologies |
| Case, NumberOfItems | 1 |
| Cat | Industrial & Scientific |
| CatId | 16310091 |
| CatTree | 16310091 16310161 306506011 306831011 306910011 |
| Feature | Manufacturer : Infineon RoHS : Product : IGBT Silicon Modules Configuration : Dual Collector- Emitter Voltage VCEO Max : 1700 V Collector-Emitter Saturation Voltage : 2.45 V Continuous Collector Current at 25 C : 1070 A Gate-Emitter Leakage Current : 400 nA Power Dissipation : 3150 W Maximum Operating Temperature : + 125 C Package / Case : 62 mm Maximum Gate Emitter Voltage : 20 V |
| Title | IGBT Modules N-CH 1.7KV 1.07KA |
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Digi-Key | FZ600R17KE3-ND | 1 | 10 | 1 @ $148.49, 10 @ $142.22 | |
| Mouser | 641-FZ600R17KE3 | 3 | 1 @ $151.61, 10 @ $143.73, 50 @ $132.05, 100 @ $132.05, 1000 @ $132.05, 10000 @ $132.05 | ||
| Avnet Europe | FZ600R17KE3 | 10 | 10 @ $139.89, 20 @ $129.90 | ||
| Avnet Asia | FZ600R17KE3 | 10 | 10 @ $165.45, 20 @ $135.06, 40 @ $112.17, 60 @ $97.32, 100 @ $90.66 | ||
| USComponent | FZ600R17KE3 | 156 | |||
| JieJie Electronics | FZ600R17KE3 | 60 | |||
| Ewing Components | FZ600R17KE3 | 7288 | |||
| Abacus Technologies | FZ600R17KE3 | 2940 | |||
| GreenTree Electronics | FZ600R17KE3 | 1933 | |||
 Galco | FZ600R17KE3-EUPC | 1 | 18 | 1 | 1 @ $270.00 |
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IGBT Modules N-CH 1.7KV 1.07KA
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer : Infineon RoHS : Product : IGBT Silicon Modules Configuration : Dual Collector- Emitter Voltage VCEO Max : 1700 V Collector-Emitter Saturation Voltage : 2.45 V Continuous Collector Current at 25 C : 1070 A Gate-Emitter Leakage Current : 400 nA Power Dissipation : 3150 W Maximum Operating Temperature : + 125 C Package / Case : 62 mm Maximum Gate Emitter Voltage : 20 V |
|---|---|
| Category | Industrial & Scientific |
| MPN | FZ600R17KE3 |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Infineon Technologies |