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ZXMN3G32DN8TA Diodes Incorporated | Discrete Semiconductor Products | DigiKey

Mosfet Array 2 N-Channel (Dual) 30V 5.5A 1.8W Surface Mount 8-SO

Diodes Incorporated . ZXMN3G32DN8TA

Attributes

Brand name, Manufacturer name, Mfr, Label, Man, Publisher, StudioDiodes Incorporated
ManufacturerDiodes Incorporated DIODES
Extra Product NameZXMN3G32DN8TA Diodes Incorporated | Discrete Semiconductor Products | DigiKey
atoms, moq, multiple, tierMinQty1, Item_package_quantity1
extraShipping, qtyInStock0
MPN, Part Number, Keyword, ModelNumber, Model_number, PartNumber, Part_numberZXMN3G32DN8TA
packagingCut Tape (CT)
SKU1827756
snippetMosfet Array 2 N-Channel (Dual) 30V 5.5A 1.8W Surface Mount 8-SO
tierMinQty2, Case, Size500
tierPrice11.0465
tierPrice20.5844299999999999
Product Group, ProductGroup, ProductTypeNameBISS
CategoryDiscrete Semiconductor Products
Series-
PackageTape & Reel (TR)
Product StatusActive
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25?C5.5A
Rds On (Max) @ Id, Vgs28mOhm @ 6A, 10V
Vgs(th) (Max) @ Id3V @ 250?A
Gate Charge (Qg) (Max) @ Vgs10.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds472pF @ 15V
Power - Max1.8W
Operating Temperature-55?C ~ 150?C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO
Base Product NumberZXMN3
AdultProduct, Autographed, Memorabilia, TradeInEligibleFalse
AsinB00LUSAXS0 B0731PM61V B07NLH5778
BrandDIODES Diodes Incorporated
Bullet_pointChannelType: Dual N-Channel Drain-sourceOnResistance-Max: 0.028 Ω QgGateCharge: 10.5 nC RatedPowerDissipation(P): 1.25 W VoltageDraintoSource: 30 V
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 522-ZXMN3G32DN8TA X500
ClassificationId306506011 306919011
DisplayNameIndustrial Electrical MOSFET
FeatureManufacturer: Diodes Incorporated Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: 7.1 A Drain-Source On Resistance: 28 mOhms Configuration: Dual Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SO-8 Packaging: Reel Fall Time: 9.7 ns
Height150 243 56 75
Identifier7039791576732
IdentifierTypeEAN
ItemClassificationBASE_PRODUCT
ItemName, Item_nameDIODES ZXMN3G32DN8TA Dual N-Channel 30 V 0.028 Ohm Enhancement Mode MOSFET - SOIC-8 - 500 item(s) ZXMN3G32DN8TA, Trans MOSFET N-CH 30V 7.1A Automotive 8-Pin SOIC T/R (50 Items)
Item_type_keywordelectronic-components mosfet-transistors
Item_weight0.36
Linkhttps://m.media-amazon.com/images/I/11iJVP2HMdL._SL75_.jpg https://m.media-amazon.com/images/I/11iJVP2HMdL.jpg https://m.media-amazon.com/images/I/21Z7sA1j8wL._SL75_.jpg https://m.media-amazon.com/images/I/21Z7sA1j8wL.jpg
Number_of_items50 500
PackageQuantity1 500
ProductTypeELECTRONIC_COMPONENT
Product_descriptionDual N-Channel 30 V 0.028 Ohm Enhancement Mode MOSFET - SOIC-8 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image ***** ZXMN3G32DN8TA, Trans MOSFET N-CH 30V 7.1A Automotive 8-Pin SOIC T/R (50 items)
Product_site_launch_date2017-06-21T18:29:38.591Z 2019-02-11T18:48:08.515Z
TitleMOSFET 30V Dual N-Channel Enhance. Mode MOSFET (500 pieces)
Typeean
Unitgrams pounds
VariantMAIN
WebsiteDisplayGroupbiss_basic_display_on_website
WebsiteDisplayGroupNameBISS Basic
Weight0.0007936641432
Width150 323 75

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SellerSKUMOQIn stockMultiplePrices
Digi-Key1827756111 @ $1.05, 500 @ $0.58
HotendaH44997795003500500500 @ $0.44
Future Electronics1756840500500500 @ $0.46, 1000 @ $0.37, 2500 @ $0.36
Win SourceZXMN3G32DN8TA1340001
AmazonSCB0731PM61V11
Digi-Key18277865002535001 @ $0.91
Digi-Key5698092125311 @ $0.83
Digi-Key18278165005001 @ $1.05

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MOSFET 30V Dual N-Channel Enhance. Mode MOSFET (500 pieces)
Brand: Diodes Incorporated
Catalog
FeatureManufacturer: Diodes Incorporated Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: 7.1 A Drain-Source On Resistance: 28 mOhms Configuration: Dual Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SO-8 Packaging: Reel Fall Time: 9.7 ns
CategoryIndustrial & Scientific
MPNZXMN3G32DN8TA
Product groupBISS
Product typeBISS
ManufacturerDiodes Incorporated
View on Amazon (paid link)
DIODES ZXMN3G32DN8TA Dual N-Channel 30 V 0.028 Ohm Enhancement Mode MOSFET - SOIC-8 - 500 item(s)
Brand: DIODES
Dual N-Channel 30 V 0.028 Ohm Enhancement Mode MOSFET - SOIC-8 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Details
  • ChannelType: Dual N-Channel
  • VoltageDraintoSource: 30 V
  • Drain-sourceOnResistance-Max: 0.028 Ω
  • QgGateCharge: 10.5 nC
  • RatedPowerDissipation(P): 1.25 W
View on Amazon (paid link)
ZXMN3G32DN8TA, Trans MOSFET N-CH 30V 7.1A Automotive 8-Pin SOIC T/R (50 Items)
Brand: Diodes Incorporated
ZXMN3G32DN8TA, Trans MOSFET N-CH 30V 7.1A Automotive 8-Pin SOIC T/R (50 items)
View on Amazon (paid link)