# ZXMN3G32DN8TA Diodes Incorporated | Discrete Semiconductor Products | DigiKey

**Manufacturer:** Diodes Incorporated  
**MPN:** `ZXMN3G32DN8TA`

## Specifications

| Attribute | Value |
| --- | --- |
| Brand name | Diodes Incorporated |
| Manufacturer name | Diodes Incorporated |
| Manufacturer | Diodes Incorporated, DIODES |
| Extra Product Name | ZXMN3G32DN8TA Diodes Incorporated \| Discrete Semiconductor Products \| DigiKey |
| atoms | 1 |
| extraShipping | 0 |
| moq | 1 |
| MPN | ZXMN3G32DN8TA |
| multiple | 1 |
| packaging | Cut Tape (CT) |
| qtyInStock | 0 |
| SKU | 1827756 |
| snippet | Mosfet Array 2 N-Channel (Dual) 30V 5.5A 1.8W Surface Mount 8-SO |
| tierMinQty1 | 1 |
| tierMinQty2 | 500 |
| tierPrice1 | 1.0465 |
| tierPrice2 | 0.5844299999999999 |
| Part Number | ZXMN3G32DN8TA |
| Product Group | BISS |
| Category | Discrete Semiconductor Products |
| Mfr | Diodes Incorporated |
| Series | - |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25?C | 5.5A |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 6A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250?A |
| Gate Charge (Qg) (Max) @ Vgs | 10.5nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 472pF @ 15V |
| Power - Max | 1.8W |
| Operating Temperature | -55?C ~ 150?C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
| Base Product Number | ZXMN3 |
| AdultProduct | False |
| Asin | B00LUSAXS0, B0731PM61V, B07NLH5778 |
| Autographed | False |
| Brand | DIODES, Diodes Incorporated |
| Bullet_point | ChannelType: Dual N-Channel, Drain-sourceOnResistance-Max: 0.028 Ω, QgGateCharge: 10.5 nC, RatedPowerDissipation(P): 1.25 W, VoltageDraintoSource: 30 V |
| Case | 500 |
| Cat | Industrial & Scientific |
| CatId | 16310091 |
| CatTree | 16310091, 16310161, 306506011, 306831011, 306910011 |
| CatalogNumberList | MS 522-ZXMN3G32DN8TA X500 |
| ClassificationId | 306506011, 306919011 |
| DisplayName | Industrial Electrical, MOSFET |
| Feature | Manufacturer: Diodes Incorporated Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: 7 |
| Height | 150, 243, 56, 75 |
| Identifier | 7039791576732 |
| IdentifierType | EAN |
| ItemClassification | BASE_PRODUCT |
| ItemName | DIODES ZXMN3G32DN8TA Dual N-Channel 30 V 0.028 Ohm Enhancement Mode MOSFET - SOIC-8 - 500 item(s), ZXMN3G32DN8TA, Trans MOSFET N-CH 30V 7.1A Automotive 8-Pin SOIC T/R (50 Items) |
| Item_name | DIODES ZXMN3G32DN8TA Dual N-Channel 30 V 0.028 Ohm Enhancement Mode MOSFET - SOIC-8 - 500 item(s), ZXMN3G32DN8TA, Trans MOSFET N-CH 30V 7.1A Automotive 8-Pin SOIC T/R (50 Items) |
| Item_package_quantity | 1 |
| Item_type_keyword | electronic-components, mosfet-transistors |
| Item_weight | 0.36 |

## Distributor availability

| Distributor | SKU | Price (USD) | Qty | Stock | MOQ |
| --- | --- | --- | --- | --- | --- |
| Digi-Key | 1827756 | 1.0465 | 1 | None | 1 |
| Hotenda | H4499779 | 0.44 | 1 | 3500 | 500 |
| Future Electronics | 1756840 | 0.455 | 1 | None | 500 |
| Win Source | ZXMN3G32DN8TA |  |  | 34000 | 1 |
| AmazonSC | B0731PM61V |  |  | None | 1 |
| Digi-Key | 1827786 | 0.91 | 1 | 253 | 500 |
| Digi-Key | 5698092 | 0.83 | 1 | 253 | 1 |
| Digi-Key | 1827816 | 1.0465 | 1 | None | 500 |

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