Diodes Incorporated . ZXMN6A08E6QTA
N-Channel 60 V 2.8A (Ta) 1.1W (Ta) Surface Mount SOT-26
Attributes
| Brand name, Manufacturer name, Manufacturer, Brand, Label, Man, Publisher, Studio | Diodes Incorporated |
|---|---|
| moq, multiple, tierMinQty1 | 1 |
| MPN, Part Number, PartNumber | ZXMN6A08E6QTA |
| qtyInStock | 0 |
| SKU | H1820475 |
| tierPrice1 | 0.3335 |
| tierPrice2 | 0.3105 |
| tierPrice3 | 0.299 |
| tierPrice4 | 0.2875 |
| tierPrice5 | 0.2829 |
| tierPrice6 | 0.276 |
| Product Group, ProductGroup, ProductTypeName | BISS |
| Asin | B0137LAFFI B0137LC218 B0137LE8N8 B0137LG3WC B0137LIFAA |
| Case, NumberOfItems, PackageQuantity | 1 10 100 5 50 |
| Cat | Industrial & Scientific |
| CatId | 16310091 |
| CatTree | 16310091 16310161 306506011 306831011 306910011 |
| Feature | Price For: Pack of 1 Manufacturer : Diodes Incorporated Product Category : MOSFET RoHS : Id - Continuous Drain Current : 2.5 A Vds - Drain-Source Breakdown Voltage : 60 V Rds On - Drain-Source Resistance : 150 mOhms Transistor Polarity : N-Channel Vgs - Gate-Source Breakdown Voltage : 20 V Vgs th - Gate-Source Threshold Voltage : 1 V Qg - Gate Charge : 5.8 nC Maximum Operating Temperature : + 150 C Price For: Pack of 10 Manufacturer : Diodes Incorporated Product Category : MOSFET RoHS : Id - Continuous Drain Current : 2.5 A Vds - Drain-Source Breakdown Voltage : 60 V Rds On - Drain-Source Resistance : 150 mOhms Transistor Polarity : N-Channel Vgs - Gate-Source Breakdown Voltage : 20 V Vgs th - Gate-Source Threshold Voltage : 1 V Qg - Gate Charge : 5.8 nC Maximum Operating Temperature : + 150 C Price For: Pack of 100 Manufacturer : Diodes Incorporated Product Category : MOSFET RoHS : Id - Continuous Drain Current : 2.5 A Vds - Drain-Source Breakdown Voltage : 60 V Rds On - Drain-Source Resistance : 150 mOhms Transistor Polarity : N-Channel Vgs - Gate-Source Breakdown Voltage : 20 V Vgs th - Gate-Source Threshold Voltage : 1 V Qg - Gate Charge : 5.8 nC Maximum Operating Temperature : + 150 C Price For: Pack of 5 Manufacturer : Diodes Incorporated Product Category : MOSFET RoHS : Id - Continuous Drain Current : 2.5 A Vds - Drain-Source Breakdown Voltage : 60 V Rds On - Drain-Source Resistance : 150 mOhms Transistor Polarity : N-Channel Vgs - Gate-Source Breakdown Voltage : 20 V Vgs th - Gate-Source Threshold Voltage : 1 V Qg - Gate Charge : 5.8 nC Maximum Operating Temperature : + 150 C Price For: Pack of 50 Manufacturer : Diodes Incorporated Product Category : MOSFET RoHS : Id - Continuous Drain Current : 2.5 A Vds - Drain-Source Breakdown Voltage : 60 V Rds On - Drain-Source Resistance : 150 mOhms Transistor Polarity : N-Channel Vgs - Gate-Source Breakdown Voltage : 20 V Vgs th - Gate-Source Threshold Voltage : 1 V Qg - Gate Charge : 5.8 nC Maximum Operating Temperature : + 150 C |
| IsDeadAsin | True |
| Size | 1 pack 10 pack 100 pack 5 pack 50 pack |
| Title | MOSFET 60V N-Ch Enh FET 20Vgs 80mOhm (1 piece) MOSFET 60V N-Ch Enh FET 20Vgs 80mOhm (10 pieces) MOSFET 60V N-Ch Enh FET 20Vgs 80mOhm (100 pieces) MOSFET 60V N-Ch Enh FET 20Vgs 80mOhm (5 pieces) MOSFET 60V N-Ch Enh FET 20Vgs 80mOhm (50 pieces) |
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Hotenda | H1820475 | 1 | 1 | 1 @ $0.33 | |
| Digi-Key | 4747690 | 1000 | 1000 | 1 @ $1.15, 10 @ $1.01, 100 @ $0.77, 500 @ $0.61, 1000 @ $0.49 | |
| Digi-Key | 4747692 | 1000 | 2950 | 1000 | 1 @ $1.15, 10 @ $1.01, 100 @ $0.77, 500 @ $0.61, 1000 @ $0.49 |
| Digi-Key | 4747691 | 1 | 1 | 1 @ $1.15, 10 @ $1.01, 100 @ $0.77, 500 @ $0.61, 1000 @ $0.49 | |
 Newark | 29AK9175 | 1 | 2967 | 1 | 1 @ $1.02, 10 @ $0.92, 25 @ $0.83, 50 @ $0.74, 100 @ $0.65, 250 @ $0.61, 500 @ $0.56, 1000 @ $0.49 |
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MOSFET 60V N-Ch Enh FET 20Vgs 80mOhm (1 piece)
Brand: Diodes Incorporated
Catalog
| Feature | Price For: Pack of 1 Manufacturer : Diodes Incorporated Product Category : MOSFET RoHS : Id - Continuous Drain Current : 2.5 A Vds - Drain-Source Breakdown Voltage : 60 V Rds On - Drain-Source Resistance : 150 mOhms Transistor Polarity : N-Channel Vgs - Gate-Source Breakdown Voltage : 20 V Vgs th - Gate-Source Threshold Voltage : 1 V Qg - Gate Charge : 5.8 nC Maximum Operating Temperature : + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | ZXMN6A08E6QTA |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Diodes Incorporated |
MOSFET 60V N-Ch Enh FET 20Vgs 80mOhm (10 pieces)
Brand: Diodes Incorporated
Catalog
| Feature | Price For: Pack of 10 Manufacturer : Diodes Incorporated Product Category : MOSFET RoHS : Id - Continuous Drain Current : 2.5 A Vds - Drain-Source Breakdown Voltage : 60 V Rds On - Drain-Source Resistance : 150 mOhms Transistor Polarity : N-Channel Vgs - Gate-Source Breakdown Voltage : 20 V Vgs th - Gate-Source Threshold Voltage : 1 V Qg - Gate Charge : 5.8 nC Maximum Operating Temperature : + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | ZXMN6A08E6QTA |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Diodes Incorporated |
MOSFET 60V N-Ch Enh FET 20Vgs 80mOhm (100 pieces)
Brand: Diodes Incorporated
Catalog
| Feature | Price For: Pack of 100 Manufacturer : Diodes Incorporated Product Category : MOSFET RoHS : Id - Continuous Drain Current : 2.5 A Vds - Drain-Source Breakdown Voltage : 60 V Rds On - Drain-Source Resistance : 150 mOhms Transistor Polarity : N-Channel Vgs - Gate-Source Breakdown Voltage : 20 V Vgs th - Gate-Source Threshold Voltage : 1 V Qg - Gate Charge : 5.8 nC Maximum Operating Temperature : + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | ZXMN6A08E6QTA |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Diodes Incorporated |
MOSFET 60V N-Ch Enh FET 20Vgs 80mOhm (5 pieces)
Brand: Diodes Incorporated
Catalog
| Feature | Price For: Pack of 5 Manufacturer : Diodes Incorporated Product Category : MOSFET RoHS : Id - Continuous Drain Current : 2.5 A Vds - Drain-Source Breakdown Voltage : 60 V Rds On - Drain-Source Resistance : 150 mOhms Transistor Polarity : N-Channel Vgs - Gate-Source Breakdown Voltage : 20 V Vgs th - Gate-Source Threshold Voltage : 1 V Qg - Gate Charge : 5.8 nC Maximum Operating Temperature : + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | ZXMN6A08E6QTA |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Diodes Incorporated |
MOSFET 60V N-Ch Enh FET 20Vgs 80mOhm (50 pieces)
Brand: Diodes Incorporated
Catalog
| Feature | Price For: Pack of 50 Manufacturer : Diodes Incorporated Product Category : MOSFET RoHS : Id - Continuous Drain Current : 2.5 A Vds - Drain-Source Breakdown Voltage : 60 V Rds On - Drain-Source Resistance : 150 mOhms Transistor Polarity : N-Channel Vgs - Gate-Source Breakdown Voltage : 20 V Vgs th - Gate-Source Threshold Voltage : 1 V Qg - Gate Charge : 5.8 nC Maximum Operating Temperature : + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | ZXMN6A08E6QTA |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Diodes Incorporated |