G3S12015H Global Power Technology-GPT | Discrete Semiconductor Products | DigiKey
Diode Silicon Carbide Schottky 1200 V 21A (DC) Through Hole TO-220F
Attributes
| Brand name, Manufacturer name, Manufacturer, Mfr | Global Power Technology-GPT |
|---|---|
| Extra Product Name | G3S12015H Global Power Technology-GPT | Discrete Semiconductor Products | DigiKey |
| atoms, moq, multiple, tierMinQty1 | 1 |
| extraShipping, qtyInStock | 0 |
| MPN | G3S12015H |
| packaging, Package | Cut Tape (CT) |
| SKU | 14322299 |
| snippet | Diode Silicon Carbide Schottky 1200 V 21A (DC) Through Hole TO-220F |
| tierMinQty2 | 10 |
| tierMinQty3 | 30 |
| tierMinQty4 | 90 |
| tierMinQty5 | 300 |
| tierMinQty6 | 750 |
| tierPrice1 | 22.08000 |
| tierPrice2 | 20.29600 |
| tierPrice3 | 19.45467 |
| tierPrice4 | 17.14111 |
| tierPrice5 | 16.29980 |
| tierPrice6 | 15.24820 |
| Category | Discrete Semiconductor Products |
| Series | - |
| Product Status | Active |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified (Io) | 21A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 15 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 50 ?A @ 1200 V |
| Capacitance @ Vr, F | 1700pF @ 0V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 Full Pack |
| Supplier Device Package | TO-220F |
| Operating Temperature - Junction | -55?C ~ 175?C |
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Digi-Key | 14322299 | 1 | 1 | 1 @ $22.08, 10 @ $20.30, 30 @ $19.45, 90 @ $17.14, 300 @ $16.30, 750 @ $15.25 |