IXTX32P60P IXYS | Discrete Semiconductor Products | DigiKey
IXYS IXTX32P60P | Transistor: P-MOSFET; PolarP?; unipolar; -600V; -32A; 890W; 480n
Gallery
.jpg)
Attributes
| Brand name, Manufacturer name, Manufacturer, Mfr | IXYS |
|---|---|
| Extra Product Name | IXTX32P60P IXYS | Discrete Semiconductor Products | DigiKey |
| atoms, moq, multiple, tierMinQty1 | 1 |
| MPN | IXTX32P60P |
| qtyInStock | 864 |
| SKU | IXTX32P60P-ND |
| tierMinQty2 | 10 |
| tierMinQty3 | 25 |
| tierMinQty4 | 100 |
| tierMinQty5 | 500 |
| tierMinQty6 | 1,000 |
| tierMinQty7 | 2,500 |
| tierMinQty8 | 5,000 |
| tierPrice1 | 14.76000 |
| tierPrice2 | 13.56800 |
| tierPrice3 | 13.00560 |
| tierPrice4 | 11.24800 |
| tierPrice5 | 10.19350 |
| tierPrice6 | 9.34990 |
| tierPrice7 | 8.78750 |
| tierPrice8 | 8.43600 |
| Category | Discrete Semiconductor Products |
| Series | Tube |
| Package | Active |
| Part Status | P-Channel |
| FET Type | MOSFET (Metal Oxide) |
| Technology | 32A (Tc) |
| Current - Continuous Drain (Id) @ 25?C | 10V |
| Drive Voltage (Max Rds On, Min Rds On) | 350mOhm @ 16A, 10V |
| Rds On (Max) @ Id, Vgs | 4V @ 1mA |
| Vgs(th) (Max) @ Id | ?20V |
| Vgs (Max) | - |
| FET Feature | 890W (Tc) |
| Power Dissipation (Max) | -55?C ~ 150?C (TJ) |
| Operating Temperature | Through Hole |
| Mounting Type | PLUS247?-3 |
| Supplier Device Package | TO-247-3 |
| Package / Case | 600 V |
| Drain to Source Voltage (Vdss) | 196 nC @ 10 V |
| Gate Charge (Qg) (Max) @ Vgs | 11100 pF @ 25 V |
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Digi-Key | IXTX32P60P-ND | 1 | 864 | 1 | 1 @ $14.76, 10 @ $13.57, 25 @ $13.01, 100 @ $11.25, 500 @ $10.19, 1000 @ $9.35, 2500 @ $8.79, 5000 @ $8.44 |
| Future Electronics | 4097199 | 60 | 60 | 60 @ $15.26, 60 @ $13.12 | |
| IXTX32P60P | 1 | 1 | 1 @ $20.88, 3 @ $18.60, 10 @ $16.64, 30 @ $15.44 | ||
| Amazon | B07BZQP7VQ | 1 | 1 | ||
| Digi-Key | 1995434 | 1 | 1 | 1 @ $21.21, 10 @ $19.56, 100 @ $16.71, 500 @ $15.17 |