IXTQ60N20L2 IXYS | Discrete Semiconductor Products | DigiKey
IXYS IXTQ60N20L2 | Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO3P; 330n
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Attributes
| Brand name, Manufacturer name, Manufacturer, Mfr | IXYS |
|---|---|
| Extra Product Name | IXTQ60N20L2 IXYS | Discrete Semiconductor Products | DigiKey |
| atoms, moq, multiple, tierMinQty1 | 1 |
| MPN | IXTQ60N20L2 |
| qtyInStock | 0 |
| SKU | IXTQ60N20L2-ND |
| tierMinQty2 | 10 |
| tierMinQty3 | 25 |
| tierMinQty4 | 100 |
| tierMinQty5 | 500 |
| tierMinQty6 | 1,000 |
| tierMinQty7 | 2,500 |
| tierMinQty8 | 5,000 |
| tierPrice1 | 12.39000 |
| tierPrice2 | 11.38700 |
| tierPrice3 | 10.91520 |
| tierPrice4 | 9.44000 |
| tierPrice5 | 8.55500 |
| tierPrice6 | 7.84700 |
| tierPrice7 | 7.37500 |
| tierPrice8 | 7.08000 |
| Category | Discrete Semiconductor Products |
| Series | Tube |
| Package | Active |
| Part Status | N-Channel |
| FET Type | MOSFET (Metal Oxide) |
| Technology | 60A (Tc) |
| Current - Continuous Drain (Id) @ 25?C | 10V |
| Drive Voltage (Max Rds On, Min Rds On) | 45mOhm @ 30A, 10V |
| Rds On (Max) @ Id, Vgs | 4.5V @ 250?A |
| Vgs(th) (Max) @ Id | ?20V |
| Vgs (Max) | - |
| FET Feature | 540W (Tc) |
| Power Dissipation (Max) | -55?C ~ 150?C (TJ) |
| Operating Temperature | Through Hole |
| Mounting Type | TO-3P |
| Supplier Device Package | TO-3P-3, SC-65-3 |
| Package / Case | 200 V |
| Drain to Source Voltage (Vdss) | 255 nC @ 10 V |
| Gate Charge (Qg) (Max) @ Vgs | 10500 pF @ 25 V |
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Digi-Key | IXTQ60N20L2-ND | 1 | 1 | 1 @ $12.39, 10 @ $11.39, 25 @ $10.92, 100 @ $9.44, 500 @ $8.55, 1000 @ $7.85, 2500 @ $7.38, 5000 @ $7.08 | |
| Future Electronics | 7092247 | 60 | 60 | ||
| IXTQ60N20L2 | 1 | 1 | 1 @ $19.92, 3 @ $17.92, 10 @ $15.69, 30 @ $14.25 | ||
| Digi-Key | 2354481 | 1 | 1 | 1 @ $19.55, 10 @ $17.97, 100 @ $15.18, 500 @ $13.50 |