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2N3016 SemiConductor - CASE: Standard MAKE: USA Make

2N3016 SemiConductor - CASE: Standard MAKE: USA Make

USA Make . 2N3016

Attributes

Brand name, Manufacturer name, ManufacturerUSA Make
keywordsBuy 2N3016, 2N3016, 2N3016 SemiConductor
moq, multiple1
MPN, SKU2N3016
originalCurrency{'currency': 'GBP'}
qtyInStock0
snippet2N3016 SemiConductor - CASE: Standard MAKE: USA Make
TypeTransistor Silicon NPN
CaseTO5
Vbr CBO100
Vbr CEO50
Max PD (W)3.3
Min hFE, Forward Current Transfer Ratio (hFE), MIN60
Ic Max (A)2.5
@Ic (test) (A)1.0
Icbo Max @Vcb Max (A)100n
PolarityNPN
Derate Above 25?C66m
Oper Temp (?C) Max140
@VCE (V)5.0
Pinout Equivalence NumberN/A
Surface Mounted Yes/NoNO
Maximum Collector Power Dissipation (Pc)3.3 W
Maximum Collector-Base Voltage |Vcb|100 V
Maximum Collector-Emitter Voltage |Vce|50 V
Maximum Emitter-Base Voltage |Veb|4 V
Maximum Collector Current |Ic max|2.5 A
Max Operating Junction Temperature (Tj)150 ?C
Transition Frequency (ft):200 MHz

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Little Diode2N301611