IXFN82N60Q3 IXYS | Discrete Semiconductor Products | DigiKey
IXYS IXFN82N60Q3 | Module; single transistor; 600V; 66A; SOT227B; Ugs: ?40V; scre
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Attributes
| Brand name, Manufacturer name, Manufacturer, Mfr | IXYS |
|---|---|
| Extra Product Name | IXFN82N60Q3 IXYS | Discrete Semiconductor Products | DigiKey |
| atoms, moq, multiple, tierMinQty1 | 1 |
| MPN | IXFN82N60Q3 |
| qtyInStock | 12 |
| SKU | IXFN82N60Q3-ND |
| tierMinQty2 | 10 |
| tierMinQty3 | 25 |
| tierMinQty4 | 100 |
| tierMinQty5 | 500 |
| tierMinQty6 | 2,500 |
| tierPrice1 | 41.77000 |
| tierPrice2 | 38.96700 |
| tierPrice3 | 37.33320 |
| tierPrice4 | 32.66660 |
| tierPrice5 | 28.93330 |
| tierPrice6 | 27.99996 |
| Category | Discrete Semiconductor Products |
| Series | Tube |
| Package | Active |
| Part Status | N-Channel |
| FET Type | MOSFET (Metal Oxide) |
| Technology | 66A (Tc) |
| Current - Continuous Drain (Id) @ 25?C | 10V |
| Drive Voltage (Max Rds On, Min Rds On) | 75mOhm @ 41A, 10V |
| Rds On (Max) @ Id, Vgs | 6.5V @ 8mA |
| Vgs(th) (Max) @ Id | ?30V |
| Vgs (Max) | - |
| FET Feature | 960W (Tc) |
| Power Dissipation (Max) | -55?C ~ 150?C (TJ) |
| Operating Temperature | Chassis Mount |
| Mounting Type | SOT-227B |
| Supplier Device Package | SOT-227-4, miniBLOC |
| Package / Case | 600 V |
| Drain to Source Voltage (Vdss) | 275 nC @ 10 V |
| Gate Charge (Qg) (Max) @ Vgs | 13500 pF @ 25 V |
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Digi-Key | IXFN82N60Q3-ND | 1 | 12 | 1 | 1 @ $41.77, 10 @ $38.97, 25 @ $37.33, 100 @ $32.67, 500 @ $28.93, 2500 @ $28.00 |
| Future Electronics | 7056454 | 20 | 20 | 20 @ $72.24, 20 @ $50.57 | |
| 804-7587 | 1 | 1 | |||
| IXFN82N60Q3 | 1 | 10 | 1 | 1 @ $67.13, 3 @ $59.29, 10 @ $53.26 | |
| Amazon | B00MEK0ZV8 | 1 | 1 | ||
 Digi-Key | 2773879 | 1 | 1 | 1 @ $57.90, 10 @ $54.39, 100 @ $48.77 |