# IXFJ20N85X IXYS | Discrete Semiconductor Products | DigiKey

**Manufacturer:** IXYS  
**MPN:** `IXFJ20N85X`

## Specifications

| Attribute | Value |
| --- | --- |
| Brand name | IXYS |
| Manufacturer name | IXYS |
| Manufacturer | IXYS |
| Extra Product Name | IXFJ20N85X IXYS \| Discrete Semiconductor Products \| DigiKey |
| atoms | 1 |
| extraShipping | 0 |
| moq | 1 |
| MPN | IXFJ20N85X |
| multiple | 1 |
| packaging | Tube |
| qtyInStock | 0 |
| SKU | 6621935 |
| snippet | N-Channel 850 V 9.5A (Tc) 110W (Tc) Through Hole ISO TO-247-3 |
| tierMinQty1 | 30 |
| tierPrice1 | 10.56233 |
| Category | Discrete Semiconductor Products |
| Mfr | IXYS |
| Series | HiPerFET?, Ultra X |
| Package | Tube |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 850 V |
| Current - Continuous Drain (Id) @ 25?C | 9.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 5.5V @ 2.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Vgs (Max) | ?30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1660 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Operating Temperature | -55?C ~ 150?C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | ISO TO-247-3 |
| Package / Case | TO-247-3 |
| Base Product Number | IXFJ20 |

## Distributor availability

| Distributor | SKU | Price (USD) | Qty | Stock | MOQ |
| --- | --- | --- | --- | --- | --- |
| Digi-Key | 6621935 | 10.56233 | 1 | None | 1 |
| TME | IXFJ20N85X | 10.41 | 1 | 10 | 1 |

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