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2N1762 SemiConductor - CASE: Standard MAKE: Generic

2N1762 SemiConductor - CASE: Standard MAKE: Generic

Generic . 2N1762

Attributes

Brand name, Manufacturer name, ManufacturerGeneric
keywordsBuy 2N1762, 2N1762, 2N1762 SemiConductor
moq, multiple1
MPN, SKU2N1762
originalCurrency{'currency': 'GBP'}
qtyInStock0
snippet2N1762 SemiConductor - CASE: Standard MAKE: Generic
CaseMS7
TypeTransistor Germanium PNP
Vbr CBO, Oper Temp (?C) Max100
Vbr CEO75
Max PD (W)28
Max hFE150
Min hFE, Forward Current Transfer Ratio (hFE), MIN60
Ic Max (A)3.0
@Ic (test) (A)500m
Icbo Max @Vcb Max (A)2.0m
PolarityPNP
Tr Max (s)5.0u
R(sat) (?)270m
Derate Above 25?C400m
Trans Freq (Hz) Min15k
@VCE (V)2.0
Pinout Equivalence NumberN/A
Surface Mounted Yes/NoNO
Maximum Collector Power Dissipation (Pc)28 W
Maximum Collector-Base Voltage |Vcb|100 V
Maximum Collector-Emitter Voltage |Vce|75 V
Maximum Emitter-Base Voltage |Veb|30 V
Maximum Collector Current |Ic max|3 A
Max Operating Junction Temperature (Tj)95 ?C
Transition Frequency (ft):0.15 MHz

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Little Diode2N176211