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G3S12002D Global Power Technology-GPT | Discrete Semiconductor Products | DigiKey

Diode Silicon Carbide Schottky 1200 V 7A (DC) Surface Mount TO-263

Global Power Technology-GPT . G3S12002D

Attributes

Brand name, Manufacturer name, Manufacturer, MfrGlobal Power Technology-GPT
Extra Product NameG3S12002D Global Power Technology-GPT | Discrete Semiconductor Products | DigiKey
atoms, moq, multiple, tierMinQty11
extraShipping, qtyInStock0
MPNG3S12002D
packaging, PackageCut Tape (CT)
SKU14322336
snippetDiode Silicon Carbide Schottky 1200 V 7A (DC) Surface Mount TO-263
tierMinQty210
tierMinQty330
tierMinQty490
tierMinQty5300
tierMinQty6750
tierPrice14.08000
tierPrice23.66500
tierPrice33.46500
tierPrice43.00300
tierPrice52.84900
tierPrice62.55640
CategoryDiscrete Semiconductor Products
Series-
Product StatusActive
Diode TypeSilicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)1200 V
Current - Average Rectified (Io)7A (DC)
Voltage - Forward (Vf) (Max) @ If1.7 V @ 2 A
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
Current - Reverse Leakage @ Vr50 ?A @ 1200 V
Capacitance @ Vr, F136pF @ 0V, 1MHz
Mounting TypeSurface Mount
Package / CaseTO-263-3, D?Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263
Operating Temperature - Junction-55?C ~ 175?C

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Digi-Key14322336111 @ $4.08, 10 @ $3.67, 30 @ $3.46, 90 @ $3.00, 300 @ $2.85, 750 @ $2.56