ZXMN10A11K Diodes Incorporated | Discrete Semiconductor Products | DigiKey
N-Channel 100 V 2.4A (Ta) 2.11W (Ta) Surface Mount TO-252-3
Gallery
Attributes
| Brand name, Manufacturer name, Manufacturer, Brand, Label, Man, Publisher, Studio | Diodes Incorporated |
|---|---|
| Extra Product Name | ZXMN10A11K Diodes Incorporated | Discrete Semiconductor Products | DigiKey |
| atoms, moq, multiple, tierMinQty1 | 1 |
| MPN, Part Number, PartNumber | ZXMN10A11K |
| qtyInStock, tierMinQty5 | 500 |
| SKU | 5684706 |
| tierMinQty2 | 10 |
| tierMinQty3 | 25 |
| tierMinQty4 | 100 |
| tierPrice1 | 0.48000 |
| tierPrice2 | 0.41300 |
| tierPrice3 | 0.38520 |
| tierPrice4 | 0.28600 |
| tierPrice5 | 0.22330 |
| Product Group, ProductGroup, ProductTypeName | BISS |
| Category | Discrete Semiconductor Products |
| Asin | B00SRVDA74 B00SRVDCJ0 B00SRVDEKM |
| Case, NumberOfItems, PackageQuantity | 1 10 100 |
| Cat | Industrial & Scientific |
| CatId | 16310091 |
| CatTree | 16310091 16310161 306506011 306831011 306910011 |
| Feature | u" Minimum Quantity: 1 Packaging: Cut Tape (CT) FET Type: MOSFET N-Channel, Metal Oxide FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25\xc3'\xc2\xb0C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 350 mOhm @ 2.6A, 10V Vgs(th) (Max) @ Id: 4V @ 250\xc3'\xc2\xb5A Gate Charge (Qg) @ Vgs: 5.4nC @ 10V Input Capacitance (Ciss) @ Vds: 274pF @ 50V Power - Max: 2.11W" |
| Size | 1 pack 10 pack 100 pack |
| Title | MOSFET N-CH 100V 2.4A DPAK (1 piece) MOSFET N-CH 100V 2.4A DPAK (10 pieces) MOSFET N-CH 100V 2.4A DPAK (100 pieces) |
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| 5684706 | 1 | 500 | 1 | 1 @ $0.48, 10 @ $0.41, 25 @ $0.39, 100 @ $0.29, 500 @ $0.22 | |
| ZXMN10A11KCT-ND | 1 | 1 | 1 @ $1.04 | ||
| Digi-Key | 1137282 | 1 | 1 | ||
| Hotenda | H4554124 | 1 | 1 | 1 @ $0.85, 10 @ $0.75, 100 @ $0.57, 500 @ $0.45 | |
| Digi-Key | 1137296 | 1 | 1 | ||
| Digi-Key | 5684511 | 1 | 1 |
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MOSFET N-CH 100V 2.4A DPAK (1 piece)
Brand: Diodes Incorporated
Catalog
| Feature | u" Minimum Quantity: 1 Packaging: Cut Tape (CT) FET Type: MOSFET N-Channel, Metal Oxide FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25\xc3'\xc2\xb0C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 350 mOhm @ 2.6A, 10V Vgs(th) (Max) @ Id: 4V @ 250\xc3'\xc2\xb5A Gate Charge (Qg) @ Vgs: 5.4nC @ 10V Input Capacitance (Ciss) @ Vds: 274pF @ 50V Power - Max: 2.11W" |
|---|---|
| Category | Industrial & Scientific |
| MPN | ZXMN10A11K |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Diodes Incorporated |
MOSFET N-CH 100V 2.4A DPAK (10 pieces)
Brand: Diodes Incorporated
Catalog
| Feature | u" Minimum Quantity: 1 Packaging: Cut Tape (CT) FET Type: MOSFET N-Channel, Metal Oxide FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25\xc3'\xc2\xb0C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 350 mOhm @ 2.6A, 10V Vgs(th) (Max) @ Id: 4V @ 250\xc3'\xc2\xb5A Gate Charge (Qg) @ Vgs: 5.4nC @ 10V Input Capacitance (Ciss) @ Vds: 274pF @ 50V Power - Max: 2.11W" |
|---|---|
| Category | Industrial & Scientific |
| MPN | ZXMN10A11K |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Diodes Incorporated |
MOSFET N-CH 100V 2.4A DPAK (100 pieces)
Brand: Diodes Incorporated
Catalog
| Feature | u" Minimum Quantity: 1 Packaging: Cut Tape (CT) FET Type: MOSFET N-Channel, Metal Oxide FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25\xc3'\xc2\xb0C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 350 mOhm @ 2.6A, 10V Vgs(th) (Max) @ Id: 4V @ 250\xc3'\xc2\xb5A Gate Charge (Qg) @ Vgs: 5.4nC @ 10V Input Capacitance (Ciss) @ Vds: 274pF @ 50V Power - Max: 2.11W" |
|---|---|
| Category | Industrial & Scientific |
| MPN | ZXMN10A11K |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Diodes Incorporated |