YANGJIE TECHNOLOGY YJ4N60CZ | Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 100W; TO220AB
YANGJIE TECHNOLOGY YJ4N60CZ | Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 100W; TO220A
Gallery
Attributes
| Brand name, Manufacturer name, Manufacturer | YANGJIE TECHNOLOGY |
|---|---|
| CategoryL1 | Semiconductors |
| CategoryL2 | Transistors |
| CategoryL3 | Unipolar transistors |
| CategoryL4 | N channel transistors |
| Extra Product Name | YANGJIE TECHNOLOGY YJ4N60CZ | Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 100W; TO220AB |
| atoms, moq, multiple | 1 |
| jsonUrlData | 5d740a138436a95863fb85b4930cb83d.5 |
| jsonUrlData2 | 82669a440a08b93490cf |
| keywords | YANGJIE TECHNOLOGY, YJ4N60CZ, YJ4N60CZ-YAN, Semiconductors, Transistors, Unipolar transistors, N channel transistors, THT N channel transistors |
| MPN | YJ4N60CZ |
| qtyInStock | 0 |
| SKU | YJ4N60CZ-YAN |
| snippet | YANGJIE TECHNOLOGY YJ4N60CZ | Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 100W; TO220A |
| Type of transistor | N-MOSFET |
| Polarisation | unipolar |
| Drain-source voltage | 600V |
| Drain current | 4A |
| Pulsed drain current | 16A |
| Power dissipation | 100W |
| Case | TO220AB |
| Gate-source voltage | ?20V |
| On-state resistance | 2.5? |
| Mounting | THT |
| Gate charge | 20nC |
| Kind of package | tube |
| Kind of channel | enhanced |
| Heatsink thickness | max. 1.33mm |
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| YJ4N60CZ-YAN | 1 | 1 |