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G3S06505D Global Power Technology-GPT | Discrete Semiconductor Products | DigiKey

Diode Silicon Carbide Schottky 650 V 22.6A (DC) Surface Mount TO-263

Global Power Technology-GPT . G3S06505D

Attributes

Brand name, Manufacturer name, Manufacturer, MfrGlobal Power Technology-GPT
Extra Product NameG3S06505D Global Power Technology-GPT | Discrete Semiconductor Products | DigiKey
atoms, moq, multiple, tierMinQty11
extraShipping, qtyInStock0
MPNG3S06505D
packaging, PackageCut Tape (CT)
SKU14322227
snippetDiode Silicon Carbide Schottky 650 V 22.6A (DC) Surface Mount TO-263
tierMinQty210
tierMinQty330
tierMinQty490
tierMinQty5300
tierMinQty6750
tierPrice13.44000
tierPrice23.08900
tierPrice32.92067
tierPrice42.53111
tierPrice52.40130
tierPrice62.15468
CategoryDiscrete Semiconductor Products
Series-
Product StatusActive
Diode TypeSilicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)650 V
Current - Average Rectified (Io)22.6A (DC)
Voltage - Forward (Vf) (Max) @ If1.7 V @ 5 A
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
Current - Reverse Leakage @ Vr50 ?A @ 650 V
Capacitance @ Vr, F424pF @ 0V, 1MHz
Mounting TypeSurface Mount
Package / CaseTO-263-3, D?Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263
Operating Temperature - Junction-55?C ~ 175?C

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