Toshiba America Electronic Components . U1ZB68TE12L
Attributes
| Brand name, Manufacturer name, Manufacturer | Toshiba America Electronic Components |
|---|---|
| Category, CategoryL2 | tvs-diodes |
| CategoryL1 | circuit-protection |
| moq, multiple, tierMinQty1, Number of Elements | 1 |
| MPN, SKU, Manufacturer Part Number | U1ZB68TE12L |
| qtyInStock | 0 |
| Breakdown Voltage-Max | 74.8 V |
| Breakdown Voltage-Min | 61.2 V |
| Breakdown Voltage-Nom | 68 V |
| Configuration | SINGLE |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| JESD-30 Code, Package Description | R-PDSO-C2 |
| Number of Terminals | 2 |
| Operating Temperature-Max | 150 ?C |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Packaging | - |
| Pbfree Code | No |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity | UNIDIRECTIONAL |
| Power Dissipation (Max) | 1 W |
| Qualification Status | Not Qualified |
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| iodParts | U1ZB68TE12L | 1 | 1 |