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2SA1011D SemiConductor - CASE: Standard MAKE: Generic

2SA1011D SemiConductor - CASE: Standard MAKE: Generic

Generic . 2SA1011D

Attributes

Brand name, Manufacturer name, ManufacturerGeneric
keywordsBuy 2SA1011D, 2SA1011D, 2SA1011D SemiConductor
moq, multiple1
MPN, SKU2SA1011D
originalCurrency{'currency': 'GBP'}
qtyInStock0
snippet2SA1011D SemiConductor - CASE: Standard MAKE: Generic
CaseTO220
TypeTransistor Silicon PNP
Vbr CBO180
Vbr CEO160
Max PD (W)25
Derate (Amb) (W/?C)178m
Max hFE120
Min hFE, Forward Current Transfer Ratio (hFE), MIN60
Ic Max (A)1.5
@Ic (test) (A)300m
Icbo Max @Vcb Max (A)10u
PolarityPNP
Trans Freq (Hz) Min120M
Oper Temp (?C) Max140
@VCE (V)5.0
Pinout Equivalence Number3-15
Surface Mounted Yes/NoNO
Maximum Collector Power Dissipation (Pc)25 W
Maximum Collector-Base Voltage |Vcb|, Maximum Collector-Emitter Voltage |Vce|180 V
Maximum Emitter-Base Voltage |Veb|6 V
Maximum Collector Current |Ic max|1.5 A
Max Operating Junction Temperature (Tj)175 ?C
Collector Capacitance (Cc)30 pF
Transition Frequency (ft):100 MHz

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Little Diode2SA1011D11