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IXTX6N200P3HV IXYS | Discrete Semiconductor Products | DigiKey

IXYS IXTX6N200P3HV | Transistor: N-MOSFET; Polar3?; unipolar; 2kV; 6A; 960W; 520n

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Attributes

Brand name, Manufacturer name, Manufacturer, MfrIXYS
Extra Product NameIXTX6N200P3HV IXYS | Discrete Semiconductor Products | DigiKey
atoms, minimum, moq, multiple1
MPNIXTX6N200P3HV
qtyInStock0
SKUIXTX6N200P3HV-ND
Series, FET Feature-
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25?C6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4Ohm @ 3A, 10V
Vgs(th) (Max) @ Id5V @ 250?A
Vgs (Max)?20V
Power Dissipation (Max)960W (Tc)
Operating Temperature-55?C ~ 150?C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247PLUS-HV
Package / CaseTO-247-3 Variant
Drain to Source Voltage (Vdss)2000 V
Gate Charge (Qg) (Max) @ Vgs143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3700 pF @ 25 V

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Digi-KeyIXTX6N200P3HV-ND11
TMEIXTX6N200P3HV111 @ $111.18, 3 @ $100.06, 10 @ $88.41, 30 @ $79.41
Digi-Key6109401100141001 @ $69.96, 10 @ $65.72, 100 @ $58.93