ZXMN2A14FTA Diodes Incorporated | Discrete Semiconductor Products | DigiKey
N-Channel 20 V 3.4A (Ta) 1W (Ta) Surface Mount SOT-23-3
Gallery
Attributes
| Brand name, Manufacturer name, Mfr | Diodes Incorporated |
|---|---|
| Manufacturer | Diodes Incorporated DIODES DIODES INC. |
| Extra Product Name | ZXMN2A14FTA Diodes Incorporated | Discrete Semiconductor Products | DigiKey |
| atoms, moq, multiple, tierMinQty1, Item_package_quantity | 1 |
| extraShipping | 0 |
| MPN, Part Number, Keyword, Model, ModelNumber, Model_number, PartNumber, Part_number | ZXMN2A14FTA |
| packaging | Cut Tape (CT) & Digi-Reel? |
| qtyInStock | 50435 |
| SKU | 560652 |
| snippet | N-Channel 20 V 3.4A (Ta) 1W (Ta) Surface Mount SOT-23-3 |
| tierMinQty2 | 10 |
| tierMinQty3 | 100 |
| tierMinQty4 | 500 |
| tierMinQty5 | 1,000 |
| tierMinQty6 | 3,000 |
| tierMinQty7 | 6,000 |
| tierPrice1 | 0.63000 |
| tierPrice2 | 0.54200 |
| tierPrice3 | 0.40440 |
| tierPrice4 | 0.31774 |
| tierPrice5 | 0.24553 |
| tierPrice6 | 0.22387 |
| tierPrice7 | 0.20942 |
| Product Group | BISS |
| Category | Discrete Semiconductor Products |
| Series, FET Feature | - |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25?C | 3.4A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 3.4A, 4.5V |
| Vgs(th) (Max) @ Id | 700mV @ 250?A (Min) |
| Gate Charge (Qg) (Max) @ Vgs | 6.6 nC @ 4.5 V |
| Vgs (Max) | ?12V |
| Input Capacitance (Ciss) (Max) @ Vds | 544 pF @ 10 V |
| Power Dissipation (Max) | 1W (Ta) |
| Operating Temperature | -55?C ~ 150?C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Base Product Number | ZXMN2 |
| ASIN | B06XDL8L97 B0731PCQ3V |
| AdultProduct, Autographed, Batteries_required, Memorabilia, TradeInEligible | False |
| Asin | B00LUS4SUE B00LUS4UT8 B00LUS4W8C B00LUS4XGS B00LUS4Z3O B00LUS50I8 B00M1HQWPC B00SRW1AQQ B00SRW1DJ0 B00SRW1FU2 B06XDL8L97 B0731PCQ3V |
| Binding | Misc. Tools & Home Improvement |
| Brand | DIODES Diodes Incorporated |
| Bullet_point | ChannelType: N-Ch; VoltageDraintoSource: 20 V; Drain-sourceOnResistance-Max: 0.06 Ω; ChannelType: N-Channel; VoltageDraintoSource: 20 V; Drain-sourceOnResistance-Max: 0.06 ?; QgGateCharge: 6.6 nC; RatedPowerDissipation(P): 1 W; RatedPowerDissipation(P): 1 W; QgGateCharge: 6.6 nC; |
| Case | 1 10 100 1000 3000 5 50 500 |
| Cat | Industrial & Scientific |
| CatId | 16310091 |
| CatTree | 16310091 16310161 306506011 306831011 306910011 |
| CatalogNumberList | MS 522-ZXMN2A14FTA X1 MS 522-ZXMN2A14FTA X10 MS 522-ZXMN2A14FTA X100 MS 522-ZXMN2A14FTA X5 MS 522-ZXMN2A14FTA X50 MS 522-ZXMN2A14FTA X500 |
| ClassificationId | 306506011 |
| DisplayName | Industrial Electrical |
| EAN, EANList, Identifier | 4550034615764 |
| Feature | Pack of: 1000 ChannelType: N-Ch; VoltageDraintoSource: 20 V; Drain-sourceOnResistance-Max: 0.06 \u03a9; Manufacturer: Diodes Incorporated Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 20 V Gate-Source Breakdown Voltage: +/- 12 V Continuous Drain Current: 4.1 A Drain-Source On Resistance: 110 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-23 Packaging: Reel u" Minimum Quantity: 1 Packaging: Cut Tape (CT) FET Type: MOSFET N-Channel, Metal Oxide FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25\xc3'\xc2\xb0C: 3.4A (Ta) Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.4A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250\xc3'\xc2\xb5A Gate Charge (Qg) @ Vgs: 6.6nC @ 4.5V Input Capacitance (Ciss) @ Vds: 544pF @ 10V Power - Max: 1W" |
| Height | 1.968503935 243 5.0 56 |
| IdentifierType | EAN |
| IsBrandQuery | True |
| ItemClassification | BASE_PRODUCT |
| ItemName, Item_name | DIODES ZXMN2A14FTA ZXMN2A14 Series 20 V 0.06 Ohm N-Channel Enhancement Mode MOSFET - SOT-23-3 - 25 item(s) DIODES ZXMN2A14FTA ZXMN2A14 Series 20 V 0.06 Ohm N-Channel Enhancement Mode MOSFET - SOT-23-3 - 3000 item(s) |
| Item_package_weight | 0.3 |
| Item_type_keyword | electronic-components |
| Item_weight | 0.1 0.2 |
| Label, Publisher, Studio | DIODES DIODES INC. Diodes Incorporated |
| Length | 10.0 3.93700787 3.937007870 |
| Link | https://m.media-amazon.com/images/I/21GgSBzUkwL._SL75_.jpg https://m.media-amazon.com/images/I/21GgSBzUkwL.jpg |
| Man | DIODES INC. Diodes Incorporated |
| NumberOfItems | 1 10 100 1000 25 3000 |
| Number_of_items | 25 3000 |
| PackageQuantity | 1 10 100 1000 5 50 500 |
| ProductGroup | BISS BISS Basic Pet Products |
| ProductType | ELECTRONIC_COMPONENT |
| ProductTypeName | BISS ELECTRONIC_COMPONENT PET_SUPPLIES |
| Product_description | ZXMN2A14 Series 20 V 0.06 Ohm N-Channel Enhancement Mode MOSFET - SOT-23-3 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image ***** |
| Product_site_launch_date | 2017-06-21T18:28:22.898Z 2017-06-21T18:28:44.556Z |
| Size | 1 1 pack 10 Piece 10 pack 100 Piece 100 pack 1000 pack 5 Piece 50 Piece 500 |
| Sku | DIODES INCORPORATED ZXMN2A14FTA |
| Title | DIODES ZXMN2A14FTA ZXMN2A14 Series 20 V 0.06 Ohm N-Channel Enhancement Mode MOSFET - SOT-23-3 - 25 item(s) DIODES ZXMN2A14FTA ZXMN2A14 Series 20 V 0.06 Ohm N-Channel Enhancement Mode MOSFET - SOT-23-3 - 3000 item(s) MOSFET N Channel (1 piece) MOSFET N Channel (10 pieces) MOSFET N Channel (100 pieces) MOSFET N Channel (1000 pieces) MOSFET N Channel (5 pieces) MOSFET N Channel (50 pieces) MOSFET N Channel (500 pieces) MOSFET N-CH 20V 3.4A SOT23-3 (1 piece) MOSFET N-CH 20V 3.4A SOT23-3 (10 pieces) MOSFET N-CH 20V 3.4A SOT23-3 (100 pieces) |
| Type | ean |
| URL | http://ecx.images-amazon.com/images/I/21GgSBzUkwL._SL75_.jpg https://m.media-amazon.com/images/I/21GgSBzUkwL._SL75_.jpg |
| Unit | centimeters grams inches kilograms pounds |
| Units | inches pixels pounds |
| Variant | MAIN |
| WebsiteDisplayGroup | biss_basic_display_on_website |
| WebsiteDisplayGroupName | BISS Basic |
| Weight | 0.000220462262 0.0002204622620 0.440924524 0.661386786 |
| Width | 10.0 3.93700787 3.937007870 323 75 |
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Digi-Key | 560652 | 1 | 50435 | 1 | 1 @ $0.63, 10 @ $0.54, 100 @ $0.40, 500 @ $0.32, 1000 @ $0.25, 3000 @ $0.22, 6000 @ $0.21 |
| Hotenda | H1811553 | 1 | 3000 | 1 | 1 @ $0.19 |
| Win Source | ZXMN2A14FTA | 1 | 17069 | 1 | |
| 669-7685 | 1 | 1 | |||
| Newark | 10AH1865 | 1 | 1 | ||
| Future Electronics | 7247075 | 1 | 1 | ||
| ZXMN2A14FTA | 1 | 1 | |||
| Digi-Key | 1870243 | 1000 | 1000 | 1 @ $0.63, 10 @ $0.54, 100 @ $0.40, 500 @ $0.32, 1000 @ $0.25 | |
| Digi-Key | 951580 | 1 | 1 | 1 @ $0.63, 10 @ $0.54, 100 @ $0.40, 500 @ $0.32, 1000 @ $0.25 | |
![]() Newark | 29AK9163 | 1 | 2950 | 1 | 1 @ $0.56, 10 @ $0.48, 25 @ $0.43, 50 @ $0.39, 100 @ $0.34, 250 @ $0.30, 500 @ $0.27, 1000 @ $0.22 |
| 560624 | 1 | 13843 | 1 | 1 @ $0.58, 10 @ $0.49, 100 @ $0.37, 500 @ $0.29, 1000 @ $0.22, 3000 @ $0.20, 6000 @ $0.19, 15000 @ $0.18, 30000 @ $0.17 | |
| JT25-ZXMN2A14FTA | 1 | 208 | 1 |
Related on Amazon
As an Amazon Associate, we earn from qualifying purchases. (paid link) CERTAIN CONTENT THAT APPEARS ON THIS SITE COMES FROM AMAZON. THIS CONTENT IS PROVIDED 'AS IS' AND IS SUBJECT TO CHANGE OR REMOVAL AT ANY TIME.
MOSFET N Channel (10 pieces)
Brand: Diodes Incorporated
Catalog
| Feature | Manufacturer: Diodes Incorporated Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 20 V Gate-Source Breakdown Voltage: +/- 12 V Continuous Drain Current: 4.1 A Drain-Source On Resistance: 110 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-23 Packaging: Reel |
|---|---|
| Category | Industrial & Scientific |
| MPN | ZXMN2A14FTA |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Diodes Incorporated |
MOSFET N Channel (100 pieces)
Brand: Diodes Incorporated
Catalog
| Feature | Manufacturer: Diodes Incorporated Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 20 V Gate-Source Breakdown Voltage: +/- 12 V Continuous Drain Current: 4.1 A Drain-Source On Resistance: 110 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-23 Packaging: Reel |
|---|---|
| Category | Industrial & Scientific |
| MPN | ZXMN2A14FTA |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Diodes Incorporated |
MOSFET N Channel (1000 pieces)
Catalog
| Feature | Pack of: 1000 |
|---|---|
| Category | Industrial & Scientific |
| MPN | ZXMN2A14FTA |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Diodes Incorporated |
MOSFET N Channel (5 pieces)
Brand: Diodes Incorporated
Catalog
| Feature | Manufacturer: Diodes Incorporated Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 20 V Gate-Source Breakdown Voltage: +/- 12 V Continuous Drain Current: 4.1 A Drain-Source On Resistance: 110 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-23 Packaging: Reel |
|---|---|
| Category | Industrial & Scientific |
| MPN | ZXMN2A14FTA |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Diodes Incorporated |
MOSFET N Channel (50 pieces)
Brand: Diodes Incorporated
Catalog
| Feature | Manufacturer: Diodes Incorporated Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 20 V Gate-Source Breakdown Voltage: +/- 12 V Continuous Drain Current: 4.1 A Drain-Source On Resistance: 110 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-23 Packaging: Reel |
|---|---|
| Category | Industrial & Scientific |
| MPN | ZXMN2A14FTA |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Diodes Incorporated |
MOSFET N Channel (500 pieces)
Brand: Diodes Incorporated
Catalog
| Feature | Manufacturer: Diodes Incorporated Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 20 V Gate-Source Breakdown Voltage: +/- 12 V Continuous Drain Current: 4.1 A Drain-Source On Resistance: 110 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-23 Packaging: Reel |
|---|---|
| Category | Industrial & Scientific |
| MPN | ZXMN2A14FTA |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Diodes Incorporated |
MOSFET N Channel (1 piece)
Brand: Diodes Incorporated
Catalog
| Feature | Manufacturer: Diodes Incorporated Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 20 V Gate-Source Breakdown Voltage: +/- 12 V Continuous Drain Current: 4.1 A Drain-Source On Resistance: 110 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-23 Packaging: Reel |
|---|---|
| Category | Industrial & Scientific |
| MPN | ZXMN2A14FTA |
| Product group | Pet Products |
| Product type | PET_SUPPLIES |
| Manufacturer | Diodes Incorporated |
MOSFET N-CH 20V 3.4A SOT23-3 (1 piece)
Brand: Diodes Incorporated
Catalog
| Feature | u" Minimum Quantity: 1 Packaging: Cut Tape (CT) FET Type: MOSFET N-Channel, Metal Oxide FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25\xc3'\xc2\xb0C: 3.4A (Ta) Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.4A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250\xc3'\xc2\xb5A Gate Charge (Qg) @ Vgs: 6.6nC @ 4.5V Input Capacitance (Ciss) @ Vds: 544pF @ 10V Power - Max: 1W" |
|---|---|
| Category | Industrial & Scientific |
| MPN | ZXMN2A14FTA |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Diodes Incorporated |
MOSFET N-CH 20V 3.4A SOT23-3 (10 pieces)
Brand: Diodes Incorporated
Catalog
| Feature | u" Minimum Quantity: 1 Packaging: Cut Tape (CT) FET Type: MOSFET N-Channel, Metal Oxide FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25\xc3'\xc2\xb0C: 3.4A (Ta) Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.4A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250\xc3'\xc2\xb5A Gate Charge (Qg) @ Vgs: 6.6nC @ 4.5V Input Capacitance (Ciss) @ Vds: 544pF @ 10V Power - Max: 1W" |
|---|---|
| Category | Industrial & Scientific |
| MPN | ZXMN2A14FTA |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Diodes Incorporated |
MOSFET N-CH 20V 3.4A SOT23-3 (100 pieces)
Brand: Diodes Incorporated
Catalog
| Feature | u" Minimum Quantity: 1 Packaging: Cut Tape (CT) FET Type: MOSFET N-Channel, Metal Oxide FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25\xc3'\xc2\xb0C: 3.4A (Ta) Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.4A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250\xc3'\xc2\xb5A Gate Charge (Qg) @ Vgs: 6.6nC @ 4.5V Input Capacitance (Ciss) @ Vds: 544pF @ 10V Power - Max: 1W" |
|---|---|
| Category | Industrial & Scientific |
| MPN | ZXMN2A14FTA |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Diodes Incorporated |
DIODES ZXMN2A14FTA ZXMN2A14 Series 20 V 0.06 Ohm N-Channel Enhancement Mode MOSFET - SOT-23-3 - 3000 item(s)
Brand: DIODES
ZXMN2A14 Series 20 V 0.06 Ohm N-Channel Enhancement Mode MOSFET - SOT-23-3 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Details
- ChannelType: N-Ch; VoltageDraintoSource: 20 V; Drain-sourceOnResistance-Max: 0.06 Ω;
- RatedPowerDissipation(P): 1 W; QgGateCharge: 6.6 nC;
Listing
| Binding | Tools & Home Improvement |
|---|---|
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Model | ZXMN2A14FTA |
| Part number | ZXMN2A14FTA |
| Items per pack | 3000 |
| Label | DIODES |
| Manufacturer | DIODES |
Catalog
| Feature | ChannelType: N-Ch; VoltageDraintoSource: 20 V; Drain-sourceOnResistance-Max: 0.06 \u03a9; |
|---|---|
| Category | Industrial & Scientific |
| MPN | ZXMN2A14FTA |
| EAN | 4550034615764 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | DIODES INC. |
DIODES ZXMN2A14FTA ZXMN2A14 Series 20 V 0.06 Ohm N-Channel Enhancement Mode MOSFET - SOT-23-3 - 25 item(s)
Brand: DIODES
ZXMN2A14 Series 20 V 0.06 Ohm N-Channel Enhancement Mode MOSFET - SOT-23-3 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Details
- ChannelType: N-Channel; VoltageDraintoSource: 20 V; Drain-sourceOnResistance-Max: 0.06 ?;
- QgGateCharge: 6.6 nC; RatedPowerDissipation(P): 1 W;
Listing
| Product group | BISS Basic |
|---|---|
| Product type | ELECTRONIC_COMPONENT |
| Model | ZXMN2A14FTA |
| Part number | ZXMN2A14FTA |
| Items per pack | 25 |
| Label | DIODES |
| Manufacturer | DIODES |
