IXTX200N10L2 IXYS | Discrete Semiconductor Products | DigiKey
IXYS IXTX200N10L2 | Transistor: N-MOSFET; unipolar; 100V; 200A; 1040W; PLUS247?; 245n
Gallery
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Attributes
| Brand name, Manufacturer name, Manufacturer, Mfr | IXYS |
|---|---|
| Extra Product Name | IXTX200N10L2 IXYS | Discrete Semiconductor Products | DigiKey |
| atoms, moq, multiple, tierMinQty1 | 1 |
| MPN | IXTX200N10L2 |
| qtyInStock | 0 |
| SKU | IXTX200N10L2-ND |
| tierMinQty2 | 10 |
| tierMinQty3 | 25 |
| tierMinQty4 | 100 |
| tierMinQty5 | 500 |
| tierMinQty6 | 1,000 |
| tierMinQty7 | 2,500 |
| tierMinQty8 | 5,000 |
| tierPrice1 | 23.12000 |
| tierPrice2 | 21.32400 |
| tierPrice3 | 20.36600 |
| tierPrice4 | 17.97000 |
| tierPrice5 | 15.33440 |
| tierPrice6 | 15.09480 |
| tierPrice7 | 14.73540 |
| tierPrice8 | 14.37600 |
| Category | Discrete Semiconductor Products |
| Series | Tube |
| Package | Active |
| Part Status | N-Channel |
| FET Type | MOSFET (Metal Oxide) |
| Technology | 200A (Tc) |
| Current - Continuous Drain (Id) @ 25?C | 10V |
| Drive Voltage (Max Rds On, Min Rds On) | 11mOhm @ 100A, 10V |
| Rds On (Max) @ Id, Vgs | 4.5V @ 3mA |
| Vgs(th) (Max) @ Id | ?20V |
| Vgs (Max) | - |
| FET Feature | 1040W (Tc) |
| Power Dissipation (Max) | -55?C ~ 150?C (TJ) |
| Operating Temperature | Through Hole |
| Mounting Type | PLUS247?-3 |
| Supplier Device Package | TO-247-3 |
| Package / Case | 100 V |
| Drain to Source Voltage (Vdss) | 540 nC @ 10 V |
| Gate Charge (Qg) (Max) @ Vgs | 23000 pF @ 25 V |
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Digi-Key | IXTX200N10L2-ND | 1 | 1 | 1 @ $23.12, 10 @ $21.32, 25 @ $20.37, 100 @ $17.97, 500 @ $15.33, 1000 @ $15.09, 2500 @ $14.74, 5000 @ $14.38 | |
| Future Electronics | 7056031 | 30 | 30 | 30 @ $18.22 | |
| IXTX200N10L2 | 1 | 1 | 1 @ $48.09, 3 @ $43.30, 10 @ $38.25, 30 @ $34.27 | ||
| Digi-Key | 3586424 | 500 | 30 | 500 | 1 @ $35.39, 10 @ $32.64, 100 @ $27.87, 500 @ $25.31 |