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G3S12020A Global Power Technology-GPT | Discrete Semiconductor Products | DigiKey

Diode Silicon Carbide Schottky 1200 V 73A (DC) Through Hole TO-220AC

Attributes

Brand name, Manufacturer name, Manufacturer, MfrGlobal Power Technology-GPT
Extra Product NameG3S12020A Global Power Technology-GPT | Discrete Semiconductor Products | DigiKey
atoms, moq, multiple, tierMinQty11
extraShipping, qtyInStock0
MPNG3S12020A
packaging, PackageCut Tape (CT)
SKU14322264
snippetDiode Silicon Carbide Schottky 1200 V 73A (DC) Through Hole TO-220AC
tierMinQty210
tierMinQty330
tierMinQty490
tierMinQty5300
tierPrice132.25000
tierPrice229.74200
tierPrice328.40533
tierPrice425.39767
tierPrice524.22807
CategoryDiscrete Semiconductor Products
Series-
Product StatusActive
Diode TypeSilicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)1200 V
Current - Average Rectified (Io)73A (DC)
Voltage - Forward (Vf) (Max) @ If1.7 V @ 120 A
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
Current - Reverse Leakage @ Vr50 ?A @ 1200 V
Capacitance @ Vr, F2600pF @ 0V, 1MHz
Mounting TypeThrough Hole
Package / CaseTO-220-2
Supplier Device PackageTO-220AC
Operating Temperature - Junction-55?C ~ 175?C

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