IXFT24N90P IXYS | Discrete Semiconductor Products | DigiKey
IXYS IXFT24N90P | Transistor: N-MOSFET; Polar?; unipolar; 900V; 24A; 660W; TO26
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Attributes
| Brand name, Manufacturer name, Manufacturer, Mfr | IXYS |
|---|---|
| Extra Product Name | IXFT24N90P IXYS | Discrete Semiconductor Products | DigiKey |
| atoms, moq, multiple, tierMinQty1 | 1 |
| MPN | IXFT24N90P |
| qtyInStock | 23 |
| SKU | IXFT24N90P-ND |
| tierMinQty2 | 10 |
| tierMinQty3 | 25 |
| tierMinQty4 | 100 |
| tierMinQty5 | 500 |
| tierMinQty6 | 1,000 |
| tierMinQty7 | 2,500 |
| tierMinQty8 | 5,000 |
| tierPrice1 | 11.19000 |
| tierPrice2 | 10.28700 |
| tierPrice3 | 9.86040 |
| tierPrice4 | 8.52800 |
| tierPrice5 | 7.72850 |
| tierPrice6 | 7.08890 |
| tierPrice7 | 6.66250 |
| tierPrice8 | 6.39600 |
| Category | Discrete Semiconductor Products |
| Series | Tube |
| Package | Active |
| Part Status | N-Channel |
| FET Type | MOSFET (Metal Oxide) |
| Technology | 24A (Tc) |
| Current - Continuous Drain (Id) @ 25?C | 10V |
| Drive Voltage (Max Rds On, Min Rds On) | 420mOhm @ 12A, 10V |
| Rds On (Max) @ Id, Vgs | 6.5V @ 1mA |
| Vgs(th) (Max) @ Id | ?30V |
| Vgs (Max) | - |
| FET Feature | 660W (Tc) |
| Power Dissipation (Max) | -55?C ~ 150?C (TJ) |
| Operating Temperature | Surface Mount |
| Mounting Type | TO-268 |
| Supplier Device Package | TO-268-3, D?Pak (2 Leads + Tab), TO-268AA |
| Package / Case | 900 V |
| Drain to Source Voltage (Vdss) | 130 nC @ 10 V |
| Gate Charge (Qg) (Max) @ Vgs | 7200 pF @ 25 V |
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Digi-Key | IXFT24N90P-ND | 1 | 23 | 1 | 1 @ $11.19, 10 @ $10.29, 25 @ $9.86, 100 @ $8.53, 500 @ $7.73, 1000 @ $7.09, 2500 @ $6.66, 5000 @ $6.40 |
 Radwell | IXFT24N90P | 1 | 1 | 1 @ $22.00 | |
| IXFT24N90P | 1 | 296 | 1 | 1 @ $15.54, 3 @ $13.72, 10 @ $12.32, 30 @ $11.47 | |
| Future Electronics | C010613230 | 30 | 30 | 30 @ $6.83 | |
| Digi-Key | 2184789 | 1000 | 1000 | 1 @ $17.13, 10 @ $15.75, 100 @ $13.30, 500 @ $11.83, 1000 @ $11.13 |