The NTE384 is a multiple epitaxial silicon NPN power transistor in a TO66 type package utilizing a multiple?emitter site structure. Multiple?epitaxial construction maximizes the volt?ampere characteristic of the device and provides fast switching speeds. Multiple?emitter design ensures uniform current flow throughout the structure, which produces a high IS/b and a large safe?operation?area. The NTE384 is characterized for use in inverters operating directly from a rectified 110V power line. The leakage current is specified at 450V; therefore the device can also be used in a series bridge configuration on a 220V line. The VEBO rating of 9V eases requirements on the drive transformer in inverter applications.

The NTE384 is a multiple epitaxial silicon NPN power transistor in a TO66 type package utilizing a multiple?emitter site structure. Multiple?epitaxial construction maximizes the volt?ampere characteristic of the device and provides fast switching speeds. Multiple?emitter design ensures uniform current flow throughout the structure, which produces a high IS/b and a large safe?operation?area. The NTE384 is characterized for use in inverters operating directly from a rectified 110V power line. The leakage current is specified at 450V; therefore the device can also be used in a series bridge confi