G3S12010D Global Power Technology-GPT | Discrete Semiconductor Products | DigiKey
Diode Silicon Carbide Schottky 1200 V 33.2A (DC) Surface Mount TO-263
Attributes
| Brand name, Manufacturer name, Manufacturer, Mfr | Global Power Technology-GPT |
|---|---|
| Extra Product Name | G3S12010D Global Power Technology-GPT | Discrete Semiconductor Products | DigiKey |
| atoms, moq, multiple, tierMinQty1 | 1 |
| extraShipping, qtyInStock | 0 |
| MPN | G3S12010D |
| packaging, Package | Cut Tape (CT) |
| SKU | 14322269 |
| snippet | Diode Silicon Carbide Schottky 1200 V 33.2A (DC) Surface Mount TO-263 |
| tierMinQty2 | 10 |
| tierMinQty3 | 30 |
| tierMinQty4 | 90 |
| tierMinQty5 | 300 |
| tierMinQty6 | 750 |
| tierPrice1 | 12.02000 |
| tierPrice2 | 10.85500 |
| tierPrice3 | 10.35033 |
| tierPrice4 | 8.98722 |
| tierPrice5 | 8.58330 |
| tierPrice6 | 7.82595 |
| Category | Discrete Semiconductor Products |
| Series | - |
| Product Status | Active |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified (Io) | 33.2A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 50 ?A @ 1200 V |
| Capacitance @ Vr, F | 765pF @ 0V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D?Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | TO-263 |
| Operating Temperature - Junction | -55?C ~ 175?C |
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Digi-Key | 14322269 | 1 | 1 | 1 @ $12.02, 10 @ $10.86, 30 @ $10.35, 90 @ $8.99, 300 @ $8.58, 750 @ $7.83 |