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G3S06505H Global Power Technology-GPT | Discrete Semiconductor Products | DigiKey

Diode Silicon Carbide Schottky 650 V 15.4A (DC) Through Hole TO-220F

Global Power Technology-GPT . G3S06505H

Attributes

Brand name, Manufacturer name, Manufacturer, MfrGlobal Power Technology-GPT
Extra Product NameG3S06505H Global Power Technology-GPT | Discrete Semiconductor Products | DigiKey
atoms, moq, multiple, tierMinQty11
extraShipping, qtyInStock0
MPNG3S06505H
packaging, PackageCut Tape (CT)
SKU14322230
snippetDiode Silicon Carbide Schottky 650 V 15.4A (DC) Through Hole TO-220F
tierMinQty210
tierMinQty330
tierMinQty490
tierMinQty5300
tierMinQty6750
tierPrice13.56000
tierPrice23.19400
tierPrice33.01933
tierPrice42.61689
tierPrice52.48270
tierPrice62.22772
CategoryDiscrete Semiconductor Products
Series-
Product StatusActive
Diode TypeSilicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)650 V
Current - Average Rectified (Io)15.4A (DC)
Voltage - Forward (Vf) (Max) @ If1.7 V @ 5 A
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
Current - Reverse Leakage @ Vr50 ?A @ 650 V
Capacitance @ Vr, F424pF @ 0V, 1MHz
Mounting TypeThrough Hole
Package / CaseTO-220-2 Full Pack
Supplier Device PackageTO-220F
Operating Temperature - Junction-55?C ~ 175?C

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Digi-Key14322230111 @ $3.56, 10 @ $3.19, 30 @ $3.02, 90 @ $2.62, 300 @ $2.48, 750 @ $2.23