NXPSC046506Q WeEn Semiconductors | Discrete Semiconductor Products | DigiKey
Diode Silicon Carbide Schottky 650 V 4A Through Hole TO-220AC
Attributes
| Brand name, Manufacturer name, Manufacturer, Mfr | WeEn Semiconductors |
|---|---|
| Extra Product Name | NXPSC046506Q WeEn Semiconductors | Discrete Semiconductor Products | DigiKey |
| atoms, moq, multiple, tierMinQty1 | 1 |
| extraShipping | 0 |
| MPN | NXPSC046506Q |
| packaging, Package | Tube |
| qtyInStock | 19200 |
| SKU | 9659521 |
| snippet | Diode Silicon Carbide Schottky 650 V 4A Through Hole TO-220AC |
| tierMinQty2 | 10 |
| tierMinQty3 | 100 |
| tierMinQty4 | 500 |
| tierMinQty5 | 1,000 |
| tierMinQty6 | 2,000 |
| tierPrice1 | 3.1969999999999996 |
| tierPrice2 | 2.86925 |
| tierPrice3 | 2.30644 |
| tierPrice4 | 1.8949699999999998 |
| tierPrice5 | 1.570118 |
| tierPrice6 | 1.518 |
| Category | Discrete Semiconductor Products |
| Series | - |
| Product Status | Active |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 4A |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 4 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 170 ?A @ 650 V |
| Capacitance @ Vr, F | 130pF @ 1V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Supplier Device Package | TO-220AC |
| Operating Temperature - Junction | 175?C (Max) |
| Base Product Number | NXPSC |
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Digi-Key | 9659521 | 1 | 19200 | 1 | 1 @ $3.20, 10 @ $2.87, 100 @ $2.31, 500 @ $1.89, 1000 @ $1.57, 2000 @ $1.52 |
| NXPSC046506Q | 1 | 1 |