2N3312 SemiConductor - CASE: Standard MAKE: Generic
2N3312 SemiConductor - CASE: Standard MAKE: Generic
Attributes
| Brand name, Manufacturer name, Manufacturer | Generic |
|---|---|
| keywords | Buy 2N3312, 2N3312, 2N3312 SemiConductor |
| moq, multiple | 1 |
| MPN, SKU | 2N3312 |
| originalCurrency | {'currency': 'GBP'} |
| qtyInStock | 0 |
| snippet | 2N3312 SemiConductor - CASE: Standard MAKE: Generic |
| Type | Transistor Germanium PNP |
| Case | TO36 |
| Vbr CBO | 45 |
| Vbr CEO | 30 |
| Max PD (W) | 170 |
| Max hFE | 120 |
| Min hFE, Forward Current Transfer Ratio (hFE), MIN | 60 |
| Ic Max (A) | 5.0 |
| @Ic (test) (A) | 3.0 |
| Icbo Max @Vcb Max (A) | 5.0m |
| Polarity | PNP |
| Derate Above 25?C, @VCE (V) | 2.0 |
| Trans Freq (Hz) Min | 1.0k |
| Oper Temp (?C) Max | 125 |
| Pinout Equivalence Number | 3-14 |
| Surface Mounted Yes/No | NO |
| Maximum Collector Power Dissipation (Pc) | 170 W |
| Maximum Collector-Base Voltage |Vcb| | 45 V |
| Maximum Collector-Emitter Voltage |Vce| | 30 V |
| Maximum Emitter-Base Voltage |Veb| | 25 V |
| Maximum Collector Current |Ic max| | 5 A |
| Max Operating Junction Temperature (Tj) | 110 ?C |
| Transition Frequency (ft): | 0.06 MHz |
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Little Diode | 2N3312 | 1 | 1 |