ZXMP6A17GQTA Diodes Incorporated | Discrete Semiconductor Products | DigiKey
DIODES INCORPORATED ZXMP6A17GQTA | Transistor: P-MOSFET; unipolar; -60V; -3.5A; 2W; SOT22
Gallery
Attributes
| Brand name, Manufacturer name, Manufacturer, Mfr, Brand, Label, Man, Publisher, Studio | Diodes Incorporated |
|---|---|
| Extra Product Name | ZXMP6A17GQTA Diodes Incorporated | Discrete Semiconductor Products | DigiKey |
| atoms, tierMinQty1 | 1 |
| moq, multiple | 1,000 |
| MPN, Part Number, Model, PartNumber | ZXMP6A17GQTA |
| qtyInStock | 45000 |
| SKU | ZXMP6A17GQTADITR-ND |
| tierMinQty2 | 10 |
| tierMinQty3 | 25 |
| tierMinQty4 | 100 |
| tierMinQty5 | 500 |
| tierPrice1 | 0.72000 |
| tierPrice2 | 0.63300 |
| tierPrice3 | 0.59480 |
| tierPrice4 | 0.43180 |
| tierPrice5 | 0.36078 |
| Product Group | BISS |
| Category | Discrete Semiconductor Products |
| Series, FET Feature | - |
| Package | Tape & Reel (TR) |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25?C | 3A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 2.2A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250?A |
| Vgs (Max) | ?20V |
| Power Dissipation (Max) | 2W (Ta) |
| Operating Temperature | -55?C ~ 150?C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-223 |
| Package / Case | TO-261-4, TO-261AA |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 17.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 637 pF @ 30 V |
| ASIN | B07NLKQ1W3 |
| Asin | B0137JJT4I B0137JK3KC B0137JKHQ2 B0137JMKC6 B0137JMWB0 B07NLKQ1W3 |
| Case, NumberOfItems, PackageQuantity | 1 10 100 5 50 |
| Cat | Industrial & Scientific |
| CatId | 16310091 |
| CatTree | 16310091 16310161 306506011 306831011 306910011 |
| Feature | Price For: Pack of 1 Manufacturer : Diodes Incorporated Product Category : MOSFET RoHS : Id - Continuous Drain Current : - 3.5 A Vds - Drain-Source Breakdown Voltage : - 60 V Rds On - Drain-Source Resistance : 190 mOhms Transistor Polarity : P-Channel Vgs - Gate-Source Breakdown Voltage : 20 V Vgs th - Gate-Source Threshold Voltage : - 1 V Qg - Gate Charge : 17.7 nC Price For: Pack of 10 Manufacturer : Diodes Incorporated Product Category : MOSFET RoHS : Id - Continuous Drain Current : - 3.5 A Vds - Drain-Source Breakdown Voltage : - 60 V Rds On - Drain-Source Resistance : 190 mOhms Transistor Polarity : P-Channel Vgs - Gate-Source Breakdown Voltage : 20 V Vgs th - Gate-Source Threshold Voltage : - 1 V Qg - Gate Charge : 17.7 nC Price For: Pack of 100 Manufacturer : Diodes Incorporated Product Category : MOSFET RoHS : Id - Continuous Drain Current : - 3.5 A Vds - Drain-Source Breakdown Voltage : - 60 V Rds On - Drain-Source Resistance : 190 mOhms Transistor Polarity : P-Channel Vgs - Gate-Source Breakdown Voltage : 20 V Vgs th - Gate-Source Threshold Voltage : - 1 V Qg - Gate Charge : 17.7 nC Price For: Pack of 5 Manufacturer : Diodes Incorporated Product Category : MOSFET RoHS : Id - Continuous Drain Current : - 3.5 A Vds - Drain-Source Breakdown Voltage : - 60 V Rds On - Drain-Source Resistance : 190 mOhms Transistor Polarity : P-Channel Vgs - Gate-Source Breakdown Voltage : 20 V Vgs th - Gate-Source Threshold Voltage : - 1 V Qg - Gate Charge : 17.7 nC Price For: Pack of 50 Manufacturer : Diodes Incorporated Product Category : MOSFET RoHS : Id - Continuous Drain Current : - 3.5 A Vds - Drain-Source Breakdown Voltage : - 60 V Rds On - Drain-Source Resistance : 190 mOhms Transistor Polarity : P-Channel Vgs - Gate-Source Breakdown Voltage : 20 V Vgs th - Gate-Source Threshold Voltage : - 1 V Qg - Gate Charge : 17.7 nC |
| Height, Width | 75 |
| IsDeadAsin | True |
| ProductGroup | BISS BISS Basic |
| ProductTypeName | BISS ELECTRONIC_COMPONENT |
| Size | 1 pack 10 pack 100 pack 5 pack 50 pack |
| Title | MOSFET 60V P-Ch Enh FET 20Vgs 2W 125mOhm (1 piece) MOSFET 60V P-Ch Enh FET 20Vgs 2W 125mOhm (10 pieces) MOSFET 60V P-Ch Enh FET 20Vgs 2W 125mOhm (100 pieces) MOSFET 60V P-Ch Enh FET 20Vgs 2W 125mOhm (5 pieces) MOSFET 60V P-Ch Enh FET 20Vgs 2W 125mOhm (50 pieces) ZXMP6A17GQTA, Trans MOSFET P-CH 60V 4.3A Automotive 4-Pin(3+Tab) SOT-223 T/R (50 Items) |
| URL | https://m.media-amazon.com/images/I/11tuTaCbl5L._SL75_.jpg |
| Units | pixels |
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| ZXMP6A17GQTADITR-ND | 1000 | 45000 | 1000 | 1 @ $0.72, 10 @ $0.63, 25 @ $0.59, 100 @ $0.43, 500 @ $0.36 | |
| ZXMP6A17GQTA | 1 | 543 | 1 | 1 @ $22.86, 5 @ $10.74, 25 @ $9.31, 100 @ $8.12, 250 @ $7.57 | |
| Hotenda | H1824615 | 1 | 1000 | 1 | 1 @ $0.30 |
 Newark | 69AH3979 | 1 | 1354 | 1 | 1 @ $0.90, 10 @ $0.79, 25 @ $0.72, 50 @ $0.64, 100 @ $0.56, 250 @ $0.52, 500 @ $0.48, 1000 @ $0.40 |
| Future Electronics | 7103391 | 1000 | 1000 | 1000 @ $0.33, 2000 @ $0.28 | |
 AmazonTP | B07NLKQ1W3 | 1 | 1 | 1 @ $54.18 | |
| Newark | 38AH9586 | 1000 | 1000 | 1 @ $0.27 | |
| Digi-Key | 4747694 | 1 | 1 | 1 @ $1.02, 10 @ $0.90, 100 @ $0.69, 500 @ $0.55 | |
| Digi-Key | 4747693 | 500 | 500 | 1 @ $1.02, 10 @ $0.90, 100 @ $0.69, 500 @ $0.55 | |
| 4747695 | 1 | 1 | 1 @ $0.97, 10 @ $0.85, 100 @ $0.65, 500 @ $0.52, 1000 @ $0.41, 2000 @ $0.38, 5000 @ $0.35, 10000 @ $0.34, 25000 @ $0.27 | ||
 jotrin.com | JT25-ZXMP6A17GQTA | 1 | 980 | 1 |
Related on Amazon
As an Amazon Associate, we earn from qualifying purchases. (paid link) CERTAIN CONTENT THAT APPEARS ON THIS SITE COMES FROM AMAZON. THIS CONTENT IS PROVIDED 'AS IS' AND IS SUBJECT TO CHANGE OR REMOVAL AT ANY TIME.
MOSFET 60V P-Ch Enh FET 20Vgs 2W 125mOhm (1 piece)
Brand: Diodes Incorporated
Catalog
| Feature | Price For: Pack of 1 Manufacturer : Diodes Incorporated Product Category : MOSFET RoHS : Id - Continuous Drain Current : - 3.5 A Vds - Drain-Source Breakdown Voltage : - 60 V Rds On - Drain-Source Resistance : 190 mOhms Transistor Polarity : P-Channel Vgs - Gate-Source Breakdown Voltage : 20 V Vgs th - Gate-Source Threshold Voltage : - 1 V Qg - Gate Charge : 17.7 nC |
|---|---|
| Category | Industrial & Scientific |
| MPN | ZXMP6A17GQTA |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Diodes Incorporated |
MOSFET 60V P-Ch Enh FET 20Vgs 2W 125mOhm (10 pieces)
Brand: Diodes Incorporated
Catalog
| Feature | Price For: Pack of 10 Manufacturer : Diodes Incorporated Product Category : MOSFET RoHS : Id - Continuous Drain Current : - 3.5 A Vds - Drain-Source Breakdown Voltage : - 60 V Rds On - Drain-Source Resistance : 190 mOhms Transistor Polarity : P-Channel Vgs - Gate-Source Breakdown Voltage : 20 V Vgs th - Gate-Source Threshold Voltage : - 1 V Qg - Gate Charge : 17.7 nC |
|---|---|
| Category | Industrial & Scientific |
| MPN | ZXMP6A17GQTA |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Diodes Incorporated |
MOSFET 60V P-Ch Enh FET 20Vgs 2W 125mOhm (100 pieces)
Brand: Diodes Incorporated
Catalog
| Feature | Price For: Pack of 100 Manufacturer : Diodes Incorporated Product Category : MOSFET RoHS : Id - Continuous Drain Current : - 3.5 A Vds - Drain-Source Breakdown Voltage : - 60 V Rds On - Drain-Source Resistance : 190 mOhms Transistor Polarity : P-Channel Vgs - Gate-Source Breakdown Voltage : 20 V Vgs th - Gate-Source Threshold Voltage : - 1 V Qg - Gate Charge : 17.7 nC |
|---|---|
| Category | Industrial & Scientific |
| MPN | ZXMP6A17GQTA |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Diodes Incorporated |
MOSFET 60V P-Ch Enh FET 20Vgs 2W 125mOhm (5 pieces)
Brand: Diodes Incorporated
Catalog
| Feature | Price For: Pack of 5 Manufacturer : Diodes Incorporated Product Category : MOSFET RoHS : Id - Continuous Drain Current : - 3.5 A Vds - Drain-Source Breakdown Voltage : - 60 V Rds On - Drain-Source Resistance : 190 mOhms Transistor Polarity : P-Channel Vgs - Gate-Source Breakdown Voltage : 20 V Vgs th - Gate-Source Threshold Voltage : - 1 V Qg - Gate Charge : 17.7 nC |
|---|---|
| Category | Industrial & Scientific |
| MPN | ZXMP6A17GQTA |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Diodes Incorporated |
MOSFET 60V P-Ch Enh FET 20Vgs 2W 125mOhm (50 pieces)
Brand: Diodes Incorporated
Catalog
| Feature | Price For: Pack of 50 Manufacturer : Diodes Incorporated Product Category : MOSFET RoHS : Id - Continuous Drain Current : - 3.5 A Vds - Drain-Source Breakdown Voltage : - 60 V Rds On - Drain-Source Resistance : 190 mOhms Transistor Polarity : P-Channel Vgs - Gate-Source Breakdown Voltage : 20 V Vgs th - Gate-Source Threshold Voltage : - 1 V Qg - Gate Charge : 17.7 nC |
|---|---|
| Category | Industrial & Scientific |
| MPN | ZXMP6A17GQTA |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Diodes Incorporated |
ZXMP6A17GQTA, Trans MOSFET P-CH 60V 4.3A Automotive 4-Pin(3+Tab) SOT-223 T/R (50 Items)
Brand: Diodes Incorporated
Listing
| Product group | BISS Basic |
|---|---|
| Product type | ELECTRONIC_COMPONENT |
| Model | ZXMP6A17GQTA |
| Part number | ZXMP6A17GQTA |
| Items per pack | 50 |
| Label | Diodes Incorporated |
| Manufacturer | Diodes Incorporated |