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2N3313 SemiConductor - CASE: Standard MAKE: Generic

2N3313 SemiConductor - CASE: Standard MAKE: Generic

Generic . 2N3313

Attributes

Brand name, Manufacturer name, ManufacturerGeneric
keywordsBuy 2N3313, 2N3313, 2N3313 SemiConductor
moq, multiple1
MPN, SKU2N3313
originalCurrency{'currency': 'GBP'}
qtyInStock0
snippet2N3313 SemiConductor - CASE: Standard MAKE: Generic
TypeTransistor Germanium PNP
CaseTO36
Vbr CBO, Min hFE, Forward Current Transfer Ratio (hFE), MIN60
Vbr CEO40
Max PD (W)170
Max hFE120
Ic Max (A)5.0
@Ic (test) (A)3.0
Icbo Max @Vcb Max (A)5.0m
PolarityPNP
Derate Above 25?C, @VCE (V)2.0
Trans Freq (Hz) Min1.0k
Oper Temp (?C) Max125
Pinout Equivalence Number3-14
Surface Mounted Yes/NoNO
Maximum Collector Power Dissipation (Pc)170 W
Maximum Collector-Base Voltage |Vcb|60 V
Maximum Collector-Emitter Voltage |Vce|40 V
Maximum Emitter-Base Voltage |Veb|30 V
Maximum Collector Current |Ic max|5 A
Max Operating Junction Temperature (Tj)110 ?C
Transition Frequency (ft):0.06 MHz

Distributor offers

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Little Diode2N331311