2N5480 SemiConductor - CASE: Standard MAKE: Generic
2N5480 SemiConductor - CASE: Standard MAKE: Generic
Attributes
| Brand name, Manufacturer name, Manufacturer | Generic |
|---|---|
| keywords | Buy 2N5480, 2N5480, 2N5480 SemiConductor |
| moq, multiple | 1 |
| MPN, SKU | 2N5480 |
| originalCurrency | {'currency': 'GBP'} |
| qtyInStock | 0 |
| snippet | 2N5480 SemiConductor - CASE: Standard MAKE: Generic |
| Type | Transistor Silicon NPN |
| Case | TO59 |
| Vbr CBO, Vbr CEO | 100 |
| Max PD (W), Min hFE, Forward Current Transfer Ratio (hFE), MIN | 60 |
| t(f) Max (S) | 200n |
| Max hFE | 240 |
| Ic Max (A) | 7.0 |
| @Ic (test) (A), @VCE (V) | 2.0 |
| Icbo Max @Vcb Max (A) | 10u |
| Polarity | NPN |
| Tr Max (s) | 100n |
| Derate Above 25?C | 344m |
| Trans Freq (Hz) Min | 30M |
| Oper Temp (?C) Max | 175 |
| Pinout Equivalence Number | 3-14 |
| Surface Mounted Yes/No | NO |
| Maximum Collector Power Dissipation (Pc) | 60 W |
| Maximum Collector-Base Voltage |Vcb|, Maximum Collector-Emitter Voltage |Vce| | 100 V |
| Maximum Emitter-Base Voltage |Veb| | 6 V |
| Maximum Collector Current |Ic max| | 7 A |
| Max Operating Junction Temperature (Tj) | 200 ?C |
| Collector Capacitance (Cc) | 250 pF |
| Transition Frequency (ft): | 30 MHz |
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Little Diode | 2N5480 | 1 | 1 |