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ICE22N65W IceMOS Technology | Discrete Semiconductor Products | DigiKey Marketplace

N-Channel 650 V 22A (Tc) 208W (Tc) Through Hole TO-247

IceMOS Technology . ICE22N65W

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Attributes

Brand name, Manufacturer name, Manufacturer, MfrIceMOS Technology
CategoryL1, CategoryDiscrete Semiconductor Products
CategoryL2Transistors
CategoryL3FETs, MOSFETs
Extra Product NameICE22N65W IceMOS Technology | Discrete Semiconductor Products | DigiKey Marketplace
atoms, moq, multiple1
extraShipping12.0
MPN, Manufacturer Product NumberICE22N65W
qtyInStock0
SKU20412686
snippet, Detailed DescriptionN-Channel 650 V 22A (Tc) 208W (Tc) Through Hole TO-247
Digi-Key Part Number5133-ICE22N65W-ND
DescriptionSuperjunction MOSFET
Series, FET Feature-
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25?C22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs165mOhm @ 11A, 10V
Vgs(th) (Max) @ Id3.9V @ 250?A
Gate Charge (Qg) (Max) @ Vgs82 nC @ 10 V
Vgs (Max)?20V
Input Capacitance (Ciss) (Max) @ Vds2650 pF @ 25 V
Power Dissipation (Max)208W (Tc)
Operating Temperature-55?C ~ 150?C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247
Package / CaseTO-247-3

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